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Light emitters fabricated on bulk GaN substrates. Challenges and achievements.

Published online by Cambridge University Press:  21 March 2011

Piotr Perlin ,
M. Leszczy ski ,
P. Prystawko ,
R. Czernecki ,
G. Nowak ,
P. Wisniewski ,
L. Dmowski ,
H. Teisseyre ,
E. Litwin-Staszewska  and
T. Suski
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Piotr Perlin
Affiliation:
High Pressure Research Center, “Unipress”, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
M. Leszczy ski
Affiliation:
High Pressure Research Center, “Unipress”, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
P. Prystawko
Affiliation:
High Pressure Research Center, “Unipress”, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
R. Czernecki
Affiliation:
High Pressure Research Center, “Unipress”, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
G. Nowak
Affiliation:
High Pressure Research Center, “Unipress”, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
P. Wisniewski
Affiliation:
High Pressure Research Center, “Unipress”, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
L. Dmowski
Affiliation:
High Pressure Research Center, “Unipress”, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
E. Litwin-Staszewska
Affiliation:
High Pressure Research Center, “Unipress”, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
T. Suski
Affiliation:
High Pressure Research Center, “Unipress”, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
I. Grzegory
Affiliation:
High Pressure Research Center, “Unipress”, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
S. Porowski
Affiliation:
High Pressure Research Center, “Unipress”, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
V.Yu. Ivanov
Affiliation:
Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
M. Godlewski
Affiliation:
Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
J. Holst
Affiliation:
Technische Universitaet Berlin, Germany
A. Hoffman
Affiliation:
Technische Universitaet Berlin, Germany
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Abstract

We used high-pressure grown GaN single crystal substrates to fabricate dislocation free optoelectronic devices like light emitting diodes and laser diodes structures. The latter ones demonstrated laser action under optical pumping condition with the threshold of about 200 kW/cm2 at room temperature. In the present paper we would focus on the specific aspects of the homoepitaxial growth by MOVPE method including epi-ready substrate preparation and surface polarity choice. We believe that our results demonstrate clearly the feasibility of device fabrication based on high-pressure grown GaN bulk crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I4.7.1
Copyright
Copyright © Materials Research Society 2002

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References

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