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Light beam induced current measurements on ZnO Schottky diodes and MESFETs

  • Holger von Wenckstern (a1), Zhipeng P. Zhang (a2), Michael Lorenz (a3), Christian Czekalla (a4), Heiko Frenzel (a5), Alexander Lajn (a6) and Marius Grundmann (a7)...

Abstract

The homogeneity of the Schottky barrier potential of reactively sputtered PdOy/ZnO Schottky contacts has been investigated by light beam-induced current measurements on the micrometer scale. It is found that a metallic capping layer, acting as an equipotential surface, is not necessary for PdOy/ZnO Schottky contacts in contrast to AgxO/ZnO Schottky diodes. Further, we probed the generated photocurrent of a ZnO-based metal-semiconductor field-effect transistor for a closed and open channel, respectively. The photocurrent is, in general, one order of magnitude larger for closed channel conditions. The position of maximum photocurrent generation shifts towards the drain for higher source drain voltages for closed channel conditions, whereas it is nearly independent of the source drain potential for an open channel.

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Keywords

Light beam induced current measurements on ZnO Schottky diodes and MESFETs

  • Holger von Wenckstern (a1), Zhipeng P. Zhang (a2), Michael Lorenz (a3), Christian Czekalla (a4), Heiko Frenzel (a5), Alexander Lajn (a6) and Marius Grundmann (a7)...

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