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Lifetime Characterization of Poly-Silicon Back Sealed Wafers with Bi-Surface Photoconductivity Decay Method

Published online by Cambridge University Press:  10 February 2011

Y. Ogita ,
Y. Uematsu  and
H. Daio
Y. Ogita
Affiliation:
Kanagawa Institute of Technology, Atsugi, Kanagawa, 243-02 Japan, ogita@ele.kanagawait.ac.jp
Y. Uematsu
Affiliation:
Kanagawa Institute of Technology, Atsugi, Kanagawa, 243-02 Japan, ogita@ele.kanagawait.ac.jp
H. Daio
Affiliation:
Silicon R & D Center, Showa Denko K.K., Chichibu, Saitama, 369-18 Japan, daio@ccf.sdk.co.jp
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Abstract

Bi-surface photoconductivity decay (BSPCD) method has been useful to obtain the true bulk lifetime and surface recombination velocities in silicon wafers with variously finished surfaces. Thermally oxidized n-type CZ silicon wafers with and without a poly-Si back seal (PBS) were characterized with the BSPCD method using 500 MHz-UHF wave reflection. It has been found that the surface recombination velocity of the PBS surface is, 4027 cm/s while that of the no-PBS surface is 16 cm/s, for example. The very fast surface recombination velocity is attributed to the poly-Si / Si interface character. Moreover, the bulk lifetime calculated in the PBS wafer is much higher than that in the no-PBS one, which reveals the PBS gettering performance for the thermal oxidation induced contamination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 329
Copyright
Copyright © Materials Research Society 1997

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References

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