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Leakage Currents in CVD (Ba,Sr)TiO3 Thin Films

  • C. Basceri (a1), S.K. Streiffer (a1), A.I. Kingon (a1), S. Bilodeau (a2), R. Carl (a2), P.C. Van Buskirk (a2), S.R. Summerfelt (a3), P. Mcintyre (a3) and R. Waser (a4)...

Abstract

We have analyzed the leakage behavior of polycrystalline MOCVD (Ba,Sr)TiO3 thin films as a function of both temperature and field. Of the possible mechanisms, thermionic (Schottky) emission gives a self-consistent description of the temperature and field dependencies of the true leakage current for fields in the range of 240–970 kV/cm, and yields realistic barrier heights of 1.2 eV for Pt as the cathode material. For film thicknesses of interest for use in DRAMs, the capacitance-voltage characteristics are explained via Landau-Ginzburg-Devonshire theory. Preliminary resistance degradation studies are also discussed.

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Leakage Currents in CVD (Ba,Sr)TiO3 Thin Films

  • C. Basceri (a1), S.K. Streiffer (a1), A.I. Kingon (a1), S. Bilodeau (a2), R. Carl (a2), P.C. Van Buskirk (a2), S.R. Summerfelt (a3), P. Mcintyre (a3) and R. Waser (a4)...

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