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Lattice-Matched InAsN(X=0.38) on GaAs Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

Y. C. Kao
Affiliation:
Texas Instruments, MS 147, P.O. Box 655936, Dallas, TX 75265, kao@ti.com
T. P. E. Broekaert
Affiliation:
Texas Instruments, MS 147, P.O. Box 655936, Dallas, TX 75265, kao@ti.com
H. Y. Liu
Affiliation:
Texas Instruments, MS 147, P.O. Box 655936, Dallas, TX 75265, kao@ti.com
S. Tang
Affiliation:
Texas Instruments, MS 147, P.O. Box 655936, Dallas, TX 75265, kao@ti.com
I. H. Ho
Affiliation:
University of Utah, College of Engineering, Salt Lake City, Utah 94112
G. B. Stringfellow
Affiliation:
University of Utah, College of Engineering, Salt Lake City, Utah 94112
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Abstract

In this paper, we report the MBE growth of high nitrogen content lattice-matched InAs1−xNx (x=0.38) single crystal epitaxial films on GaAs. The nitrogen incorporation is about an order higher than previously reported on other mixed group V nitride alloys. These data are consistent with a nitrogen solubility limit calculation in various III-V binary alloys, which predicts orders of magnitude higher nitrogen incorporation in InAs than any other alloys. InAsN growths were obtained using a modified ECR-MBE system with atomic-nitrogen generated by an ECR plasma source. Improved crystal quality was obtained using a “template” growth technique. An x-ray linewidth of 270 arc-s was achieved on a 0.4 μm thick InAs0.62N0.38/GaAs multi-layer structure. Hall effect data show these InAsN films are semi-metallic.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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