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Lattice Site Location Studies of Rare-Earths Implanted in ZnO Single-Crystals

  • Elisabete M.C. Rita (a1) (a2), Ulrich Wahl (a1) (a2), Armandina L. Lopes (a3), João P. Araújo (a4), João G. Correia (a1) (a2) (a5), Eduardo Alves (a1) (a2), José C. Soares (a1) (a2) and Isolde Collaboration (a5)...

Abstract

In this work we report on the lattice site location of rare earths in single-crystalline ZnO by means of the emission channeling (EC) technique. Following low dose (3×1013at/cm2) 60 keV ion implantation of the precursor isotope 169Yb, a position-sensitive electron detector was used to monitor the angular distribution of the conversion electrons emitted from 169Tm* as a function of the annealing temperature up to 600°C in vacuum. An additional annealing at 800°C in flowing O2 was performed. The EC measurements revealed that around 95–100% of the rare earth atoms occupy substitutional Zn sites up to an annealing temperature of 600°C/vacuum. After the 800°C/O2 annealing, the emission channeling effects decreased considerably.

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Lattice Site Location Studies of Rare-Earths Implanted in ZnO Single-Crystals

  • Elisabete M.C. Rita (a1) (a2), Ulrich Wahl (a1) (a2), Armandina L. Lopes (a3), João P. Araújo (a4), João G. Correia (a1) (a2) (a5), Eduardo Alves (a1) (a2), José C. Soares (a1) (a2) and Isolde Collaboration (a5)...

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