Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-25T05:38:05.497Z Has data issue: false hasContentIssue false
  • English
  • Français

Lattice Mismatch Effects in GaAsP/GaAs and GaAs/GaAsP/GaAs Heterostructures

Published online by Cambridge University Press:  28 February 2011

Y.W. Choi ,
C.R. Wie  and
S.M. Vernon
Y.W. Choi
Affiliation:
State Univ. of New York at Buffalo, Dept.of Electrical and Comp. Engr. and Center for Electronic and Electrooptic Materials, Amherst New York 14260
C.R. Wie
Affiliation:
State Univ. of New York at Buffalo, Dept.of Electrical and Comp. Engr. and Center for Electronic and Electrooptic Materials, Amherst New York 14260
S.M. Vernon
Affiliation:
Spire Corporation, Bedford, MA 01730
Get access

Abstract

Structural and electrical characteristics of the GaAs1-xPx / GaAs and GaAs/GaAs1-xPx/GaAs (x=0.02, 0.05, 0.08, 0.16 and 0.32) hetero-epitaxial systems have been investigated using X-ray rocking curve technique, Optical Beam Induced Current imaging, Nomarski Micrograph, and I-V-T and C-V measurements. The rocking curve Full Width Half Maximum of the GaAs1-xPx epilayer increased sharply at x=0.16 due to a decreased layer thickness and increased in-plane mismatch. The cross-hatched line density in the OBIC image and Nomarski Micrograph increases as the lattice mismatch increases. The epilayer surface morphology is dependent on the layer thickness. The forward I-V characteristics of Au-GaAsP/GaAs and Au-GaAs/GaAsP/GaAs Schottky diodes showed an increased tunneling current for an the increased lattice mismatch. For GaAsP/GaAs structure with a higher phosphorus composition, Fermi-level pinning caused by misfit dislocation was observed. Au-GaAs/GaAsP/GaAs Schottky diodes show an excess current at the low temperature, high field range which, we believe, is due to defect related tunneling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 789
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Shirobokov, A.M. and Kolyanov, A.N., Sov.J.Opt.Technol., 52 (9), 548 (1985)Google Scholar
2Wanlass, M.W., Gessert, T., Al-Jassim, M.M., Olson, J.M. and Blakeslee, A.E., Proc. 18th IEEE Photovoltatic Specialists Conf., 317 (1985)Google Scholar
3McClelland, R.W., King, B.D., Fan, J.C.C., and Chapman, R.L., Proc. 17th IEEE Photovoltatic Specialists Conf., 452 (1984)Google Scholar
4Wanlass, M.W., Emery, K.A., Al-Jassim, M.M. and Mason, A.R., Proc. 18th IEEE Photovoltatic Specialists Conf., 530 (1985)Google Scholar
5Vernon, S.M. et al. , J.Cryst.Growth,77, 530 (1986)Google Scholar
6Wie, C.R., Kim, H.M., and Lau, K.M., SPIE Proc., 41 , 877 (1988)Google Scholar
7Wilson, T. and McCabe, E.M., J.Appl.Phys., 61, 191 (1987)Google Scholar
8Wie, C.R., J.Appl.Phys. , 65, 2267 (1989)Google Scholar
9Ioannou, D.I. and Dimitriadis, C.A.,IEEE Tans.Electron Devices, 29,445(1985)Google Scholar
10Sze, S.M., Physics of Semiconductor Device 2nd Ed.Google Scholar
11Woodall, J.M., Pettit, G.D., Jackson, T.N., and Lanza, C., Phys. Rev. Lett., 51 (19) , 1783 (1983)Google Scholar
12Borrego, J.M. and Gutmann, R.J., Appl.Phys.Lett., 28 (5). 280 (1976)Google Scholar