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Lattice Location of Ta in Ni3Ai by Ion Channeling and Nuclear Reaction Analysis

Published online by Cambridge University Press:  28 February 2011

H. Lin
Affiliation:
University of Pennsylvania, Department of Materials Science and Engineering, Philadelphia, PA 19104
L. E. Sehberling
Affiliation:
University of Pennsylvania, Department of Physics, Philadelphia, PA 19104
P. F. Lyman
Affiliation:
University of Pennsylvania, Department of Physics, Philadelphia, PA 19104
D. P. Pope
Affiliation:
University of Pennsylvania, Department of Materials Science and Engineering, Philadelphia, PA 19104
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Abstract

We have investigated the lattice location of Ta in Ni3Al using Rutherford backscattering with channeling, and nuclear reaction analysis. An 8 MeV 4He ion beam was directed along the < 100> crystallographic axis of the Ni75Al24Ta single crystal. A silicon surface barrier detector was used to analyze 4He ions backscattered from Ni and Ta atoms. Neutrons generated from Al by the 27Al(4He,n)30P reaction were detected by a large volume liquid scintillator placed outside of the scattering chamber. Essentially all of the Ta atoms were found to be substitutional, as determined by the Ta channeling minimum yield. A comparison of the width of the channeling angular scan for Al, Ni and Ta indicated that the Ta atoms are predominantly distributed on the Ni sites. This result is in conflict with expectations based on the ternary phase diagram.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

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