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Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation

Published online by Cambridge University Press:  22 February 2011

T. E. Haynes ,
R. Morton  and
S. S. Lau
T. E. Haynes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
R. Morton
Affiliation:
Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093
S. S. Lau
Affiliation:
Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093
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Abstract

In recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 311
Copyright
Copyright © Materials Research Society 1993

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References

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