Skip to main content Accessibility help

Lateral Silicide Growth

  • L. R. Zheng (a1), E. Zingu (a1) and J. W. Mayer (a1)


Silicide formation and growth kinetics have been investigated with lateral diffusion couples formed by deposition of Ni and Cr layers on patterned Si substrates and by deposition of Ni patterns on Si films. For annealing temperatures between 520 and 650°C the growth of CrSi2follows a (time)½ dependence with an activation energy of 1.4± 0.1 eV. In Ni-silicide formation at temperatures below 600°C, Ni was the predominant moving species. As the temperature increased, the motion of Si became significant. The apparent activation energy for silicide formation varied from Ea ≅ 1.4 eV for Ni motion at relatively low temperatures to Ea≅ 2.3 eV for Si motion that occurs at high temperatures. Lateral diffusion in device geometry structures resulted in degradation of contact planarity due to the penetration of metal silicides in Ni-Si structures or the erosion of silicon in Cr-Si structures.



Hide All
1. Tu, K. N. and Mayer, J. W., in Thin Films, Interdiffusion and R eactions, Poate, J. M., Tu, K. N. and Mayer, J. W., eds. (J. Wiley, New York,(1978), pp. 359405.
2. Ottaviani, G. and Mayer, J. W., in Reliability and Degradation, Howes, M. J. and Morgan, D. V., eds. (J. Wiley, New York, 1981), pp. 105149.
3. Murarka, S. P., J. Vac. Sci. Technol. 17, 775 (1980).
4. Bower, R. W. and Mayer, J. W., Appl. Phys. Lett., 20, 359 (1972).
5. Revesz, P., Gyimesi, J., Pogany, L. and Peto, G., J. Appl. Phys. 54, 2114 (1983).
6. Zheng, L. R., Hung, L. S., Mayer, J. W., Majni, G. and Ottaviani, G., Appl. Phys. Lett., 41, 646 (1982).
7. Okabayashi, H., Nagasawa, E. and Morimoti, M., 1982 IEDM, p. 556.
8. Zheng, L. R., Hung, L. S. and Mayer, J. W., Thin Solid Films, 104, 207 (1983).
9. Zheng, L. R., Hung, L. S. and Mayer, J. W., J. Vac. Sci. Technol., 20, 758 (1983).
10. Olowolafe, J. O., Nicolet, M.-A., and Mayer, J. W., J. Appl. Phys. 47, 5182 (1976).
11. Chu, W. K., Lau, S. S., Mayer, J. W. and Muller, H., Thin Solid Films, 25, 393 (1975).
12. Pretorius, R., Strydom, W., Comrie, C. and Mayer, J. W., Phys. Rev. B22, 1885 (1980).
13. Foll, H. and Ho, P. S., J. Appl. Phys. 52, 5511 (1981).
14. Gösele, V., Tu, K. N. and Thompson, R. D., J. Appl. Phys. 53, 8759 (1982).
15. Ottaviani, G., J. Vac. Sci. Technol., 16, 1112 (1979).
16. Pretorius, R., private communication.

Lateral Silicide Growth

  • L. R. Zheng (a1), E. Zingu (a1) and J. W. Mayer (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed