Skip to main content Accessibility help

Lateral grain growth in poly-Si films by gas flame high temperature annealing

  • W. F. Qu (a1), A. Kitagawa (a1), Y. Masaki (a1) and M. Suzuki (a1)


Poly-Si films with the preferential orientation to a random, a (100) and a (110) texture were annealed using a flat gas flame. Remarkable lateral grain growth of (111) grains was observed for poly-Si films with a random and a (110) texture, while in (100) texture films the growth of (100) grains predominated over other grains. There existed tensile stress in as-prepared films. Grains with different orientation were under a different tensile stresses, and such stress distributions on the orientation of grains were different for different textures. The tensile stress was found to become larger in grown grains after high temperature annealing, while the stress on shrunken grains decreased or turned to compressive stress after annealing. These results indicate that strain energy stored in grains is one of the important driving forces in secondary grain growth.



Hide All
1) Wada, Y. and Nishimatsu, S., J.Electrochem.Soc. 125, 1499 (1978).
2) Reif, R. and Knott, J.E., Electron Lett., 17, 586 (1981).
3) Ohmura, Y., Matsushita, Y. and Kashiwagi, M., Jpn.J.Appl.Phys.Lett., 21, p.L152 (1982).
4) Sameshima, , Hara, M. and Usui, S., Jpn.J.Appl.Phys. 28, 1789 (1989).
5) Shimizu, K., Sugiura, O. and Matsumura, M., IEEE Trans.Electron Devices, ED–40, 112(1993).
6) Kung, K.T-Y., Iverson, R.B. and Reif, R., Mat.Res.Soc.Symp.Proc. 35, 727 (1985).
7) Hasegawa, S., Fujimoto, E., Inokuma, T. and Kurata, Y., J.Appl.Phys. 77, p. 357 (1995).
8) Seto, J.Y.W., J.Appl.Phys.,46, 5247 (1975).
9) Garrison, S.M., Camarata, R.C. and Thompson, C.V., J.Appl.Phys., 61, 1652 (1987).
10) Thompson, C.V. and Smith, H.I., Appl.Phys.Lett.,44, 603 (1984).
11) Thompson, C.V.,J.Appl.Phys., 58, 763 (1985).
12) Kitagawa, A.,Takeuchi, M., Futagi, S., Kanai, S., Tubota, K., Kizu, Y. and Suzuki, M., IMICE Trans.Electron.,E75–C, 1031 (1992).
13) Qu, W.F., Masaki, Y., Kitagawa, A. and Suzuki, M., J.Appl.Phys., 79,8498 (1996)
14) Masaki, Y., Suzumi, M., Qu, W.F., Kitagawa, A. and suzuki, M., J.Appl.Phys., 78, 1459 (1995).

Lateral grain growth in poly-Si films by gas flame high temperature annealing

  • W. F. Qu (a1), A. Kitagawa (a1), Y. Masaki (a1) and M. Suzuki (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed