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Laser-Material Interactions In Phase Change Optical Recording

Published online by Cambridge University Press:  26 February 2011

Roger Barton  and
Kurt A. Rubin
Roger Barton
Affiliation:
IBM San Jose Research Laboratory, 650 Harry Rd., San Jose, CA 95120-6099
Kurt A. Rubin
Affiliation:
IBM San Jose Research Laboratory, 650 Harry Rd., San Jose, CA 95120-6099
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Abstract

We have studied laser induced crystallization and amorphization reactions in tellurium and tellurium alloy thin films, which are of interest for use in optical data storage. The writing characteristics of these films are determined by plotting changes in film reflectivity against the parameters of laser power and pulse width. The laser pulse conditions necessary for film melting, crystallization, and amorphization are identified and then checked against the results of a numerical heat diffusion model. In this way we determine the critical quenching rate for formation of the amorphous phase in pure tellurium (2 × 109 C/sec). Minimum crystallization times are determined and found to increase by orders of magnitude with addition of alloying elements such as germanium or selenium. TEM analysis reveals significant differences in the crystallization mechanisms of different alloy systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 303
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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