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Laser-Induced Formation of Thin TiO2 Films from TiC14 and Oxygen an a Silicon Surface.

  • Tomoji Kawai (a1), Takahiro Choda (a1) and Shichio Kawai (a1)


A uniform thin TiO2 film with the rutile structure which is usually made at higher than 700°C, can be formed at room temperature by the laser irradiation of adsorbed TiCl4 followed by oxidation and repeated cycles of this procedure on a silicon(100) single crystal surface. The laser irradiation to gaseous mixture of TiCl4 and oxygen from the direction parallel or perpendicular to the substrate, on the other hand, leads to the formation of a TiO2 film consisting of amorphous fine particles. The mechanism of the film formation is briefly discussed.



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