- Cited by 16
Steinbrüchel, C H. and Curtis, B. J. 1986. The Role of F Atoms in the Reactive Sputter Etching of Silicon Dioxide: Langmuir Probe and Optical Actinometry Measurements. MRS Proceedings, Vol. 76, Issue. ,
Singh, O.N. and Hopman, H.J. 1987. LIF investigations of the surface chemistry in the dry processing of semiconductor devices. Microelectronics Journal, Vol. 18, Issue. 2, p. 39.
Booth, J. P. Hancock, G. and Perry, N. D. 1987. Laser induced fluorescence detection of CF and CF2radicals in a CF4/O2plasma. Applied Physics Letters, Vol. 50, Issue. 6, p. 318.
Booth, J. P. Hancock, C. Perry, N. D. Blaikleye, D. C. W. Cairns, J. A. and Smailes, R. 1987. Laser Induced Fluorescence and Optical Emission Studies of Fluorocarbon Plasmas. MRS Proceedings, Vol. 98, Issue. ,
Wormhoudt, J. McCurdy, K.E. and Burkholder, J.B. 1989. Measurements of the strengths of infrared bands of CF2. Chemical Physics Letters, Vol. 158, Issue. 6, p. 480.
Booth, J. P. Hancock, G. Perry, N. D. and Toogood, M. J. 1989. Spatially and temporally resolved laser‐induced fluorescence measurements of CF2and CF radicals in a CF4rf plasma. Journal of Applied Physics, Vol. 66, Issue. 11, p. 5251.
Hansen, S. G. Luckman, G. Nieman, George C. and Colson, Steven D. 1990. Heterogeneous processes in CF4/O2plasmas probed using laser‐induced fluorescence of CF2. Journal of Applied Physics, Vol. 68, Issue. 5, p. 2013.
Buchmann, L.‐M. Heinrich, F. Hoffmann, P. and Janes, J. 1990. Analysis of a CF4/O2plasma using emission, laser‐induced fluorescence, mass, and Langmuir spectroscopy. Journal of Applied Physics, Vol. 67, Issue. 8, p. 3635.
Heinrich, Friedhelm and Hoffmann, Peter 1992. Laser‐induced fluorescence and emission spectroscopic study of magnetic field effects in a low‐pressure etch plasma. Journal of Applied Physics, Vol. 71, Issue. 4, p. 1683.
O’Neill, James A. and Singh, Jyothi 1994. Ultraviolet absorption spectroscopy for the detection of CF2in high‐density plasmas. Journal of Applied Physics, Vol. 76, Issue. 10, p. 5967.
O’Neill, James A. and Singh, Jyothi 1995. Role of the chamber wall in low‐pressure high‐density etching plasmas. Journal of Applied Physics, Vol. 77, Issue. 2, p. 497.
Capps, Nathan Mackie, Neil and Fisher, Ellen 1998. Surface interactions of CF2 radicals in fluorocarbon plasmas with a variety of substrate materials.
BOOTH, Jean-Paul and CUNGE, Gilles 1999. Developments of Basic Researches on Fluorocarbon Plasmas for Material Processing. 7. CFx Radical Creation and Destruction at Surfaces in Fluorocarbon Plasmas.. Journal of Plasma and Fusion Research, Vol. 75, Issue. 7, p. 821.
Cunge, G. and Booth, J. P. 1999. CF2 production and loss mechanisms in fluorocarbon discharges: Fluorine-poor conditions and polymerization. Journal of Applied Physics, Vol. 85, Issue. 8, p. 3952.
Steffens, Kristen L. and Sobolewski, Mark A. 1999. Planar laser-induced fluorescence of CF2 in O2/CF4 and O2/C2F6 chamber-cleaning plasmas: Spatial uniformity and comparison to electrical measurements. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue. 2, p. 517.
Min, Jae-Ho Hwang, Sung-Wook Lee, Gyeo-Re and Moon, Sang Heup 2002. Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. I. Effect of particle emission from the bottom surface in a CF4 plasma. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, Issue. 5, p. 1574.
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Laser-induced fluorescence experiments have been carried out during CF4/O2/H2 plasma etching of Si and SiO2. Measurements of relative CF2 radical concentrations as a function of rf power, frequency, pressure, and gas composition are reported. The results are correlated with etch rates of Si and SiO2. The balance between CF2 and F concentrations is shown to influence the etching process strongly.
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This work was sponsored by the Department of the Air Force, in part with specific funding from the Air Force Office of Scientific Research.
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