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Laser-Induced Fluorescence Diagnostics of CF4/O2/H2 Plasma Etching*

  • S. Pang (a1) and S. R. J. Brueck (a1)


Laser-induced fluorescence experiments have been carried out during CF4/O2/H2 plasma etching of Si and SiO2. Measurements of relative CF2 radical concentrations as a function of rf power, frequency, pressure, and gas composition are reported. The results are correlated with etch rates of Si and SiO2. The balance between CF2 and F concentrations is shown to influence the etching process strongly.



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This work was sponsored by the Department of the Air Force, in part with specific funding from the Air Force Office of Scientific Research.



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