Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-19T23:22:59.696Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser-Induced Deposition of Silicon Films and Cars Diagnostics

Published online by Cambridge University Press:  21 February 2011

M. Hanabusa  and
H. Kikuchi
M. Hanabusa
Affiliation:
Department of Electrical and Electronic Engineering Toyohashi University of Technology, Tenpaku, Toyohashi 440, Japan
H. Kikuchi
Affiliation:
Department of Electrical and Electronic Engineering Toyohashi University of Technology, Tenpaku, Toyohashi 440, Japan
Get access

Abstract

Various laser-based deposition methods for preparation of silicon films have been reviewed briefly with emphasis on laser chemical vapor deposition (CVD). The main body of this paper is concerned with CO2 laser CVD of silane. This is interesting because the observed dependence of deposition rates on laser wavelengths indicates that gas-phase reactions are involved in deposition processes and therefore we can apply a powerful new diagnostic means, coherent anti-Stokes Raman spectroscopy (CARS), to examine gas-phase dynamics. From N2 CARS thermometry the CO2 laser beams were found to raise the temperature of the gas containing silane, when they were tuned to absorption lines of SiH4. Silane CARS spectra were characterized by a complicated profile with double peaks. We interpreted the shape of the spectra as arising from excitation of rotational levels following gas-phase reactions. Applying this interpretation, we can judge how SiH4 molecules are disturbed differently according to CO2 laser wavelengths and a distance from a substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 21
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hanabusa, M., Suzuki, M., and Nishigaki, S., Appl. Phys. Lett. 38, 385 (1981).Google Scholar
2. Hanabusa, M. and Suzuki, M., Appl. Phys. Lett. 39, 431 (1981).Google Scholar
3. Hanabusa, M. and Suzuki, M., Mat. Res. Soc. Symp. Proc. 4, 559–564 (1982).Google Scholar
4. Hanabusa, M., Moriyama, S., and Kikuchi, H., Thin Solid Films, 107, 227 (1983).CrossRefGoogle Scholar
5. Murahara, M. and Toyoda, K., 1983 Joint Convention Record of Four Institutes of Electrical Engineering, Japan, pp 3–60.Google Scholar
6. Ehrlich, D. J., Osgood, R. M. Jr., and Deutsch, T. F., Appl. Phys. Lett. 39, 957 (1981).CrossRefGoogle Scholar
7. Bauerle, D., Irsigler, P., Leyendecker, G., Noll, H., and Wagner, D., Appl. Phys. Lett. 40, 819 (1982).Google Scholar
8. Bauerle, D., Leyendecker, G., Wagner, D., Bauer, E., and Lu, Y. C., Appl. Phys. A 30, 147 (1983).Google Scholar
9. Christensen, C. P. and Lakin, K. M., Appl. Phys. Lett. 32, 254 (1978).Google Scholar
10. Baranauskas, V., Mammana, C. I. Z., Klinger, R. E. and Greene, J. E., Appl. Phys. Lett. 36, 930 (1980).Google Scholar
11. Bilenchi, R. and Musci, M., Proc. 8th Int. Conf. Electrochemical Soc. Pennington 1981 p. 275.Google Scholar
12. Bilenchi, R., Gianinoni, I., and Musci, M., J. Appl. Phys. 53, 6479 (1982).CrossRefGoogle Scholar
13. Gattuso, T. R., Meunier, M., Adler, D., and Haggerty, J. S., Mat. Res. Symp. Proc. 17, 215–222 (1983).Google Scholar
14. Meunier, M., Gattuso, T. R., Adler, D., and Haggerty, J. S., Appl. Phys. Lett. 43, 273 (1983).CrossRefGoogle Scholar
15. Klick, D., Marko, K. A., and Rimai, L., Appl. Opt. 7, 1178 (1981).Google Scholar
16. Nibler, J. W. and Knighten, G. V. in: Raman Spectroscopy of Gases and Liquids, Weber, A., ed. (Springer-Verlag, Berlin, 1979) Chapt. 7.Google Scholar
17. Scott, B. A., Plecenik, R. M., and Simonyi, E. E., Appl. Phys. Lett. 39, 73 (1981).Google Scholar
18. Kampas, F. J. and Griffith, R. W., Appl. Phys. Lett. 39, 407 (1981).CrossRefGoogle Scholar
19. Stitt, F. and Yort, D. M., J. Chem. Phys. 5, 90 (1937).Google Scholar
20. Anlauf, K. G., Horne, D. S., Macdonald, R. G., Polanyi, J. C., and Woodall, K. B., J. Chem. Phys. 57, 1561 (1972).CrossRefGoogle Scholar