Hostname: page-component-77c89778f8-rkxrd Total loading time: 0 Render date: 2024-07-22T22:46:02.115Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser-Assisted TiSi2 Formation for ULSI Applications

Published online by Cambridge University Press:  10 February 2011

Nader Shamma ,
Somit Talwar ,
Gaurav Verma ,
Karl-Josef Kramer ,
Nigel Farrar ,
Chiu Chi ,
Wayne Greene  and
Kurt Weiner
Nader Shamma
Affiliation:
Hewlett-Packard Company, ULSI Research Laboratory, Palo Alto, CA 94304
Somit Talwar
Affiliation:
Ultratech Stepper Inc., San Jose, CA 95134
Gaurav Verma
Affiliation:
Ultratech Stepper Inc., San Jose, CA 95134
Karl-Josef Kramer
Affiliation:
Ultratech Stepper Inc., San Jose, CA 95134
Nigel Farrar
Affiliation:
Hewlett-Packard Company, ULSI Research Laboratory, Palo Alto, CA 94304
Chiu Chi
Affiliation:
Hewlett-Packard Company, ULSI Research Laboratory, Palo Alto, CA 94304
Wayne Greene
Affiliation:
Hewlett-Packard Company, ULSI Research Laboratory, Palo Alto, CA 94304
Kurt Weiner
Affiliation:
Ultratech Stepper Inc., San Jose, CA 95134
Get access

Abstract

In this paper, we describe the results of recent work in which TiSi2 formation on deep-submicron polysilicon gates is achieved using pulsed excimer laser irradiation. Formation of low resistivity titanium suicide on sub-0.1 μm polysilicon lines is confirmed by sheet resistance measurements. High-resolution TEM examination shows exceptionally smooth interface between suicide and heavily-doped silicon substrate. Gate to source/drain bridging is not observed. Analytical techniques including Rutherford backscattering spectroscopy (RBS) and X-ray diffraction (XRD) have been used to characterize the irradiated films. This laser-assisted suicide formation process is a promising technology for extreme submicron MOSFET applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 265
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] van Houtum, H.J.W., Raaijmakers, I.J.M.M., Menting, T.J.M., J. Appl. Phys. 61 (1987) 3116.Google Scholar
[2] Beyers, R., Coulman, D., Merchant, P., J. Appl. Phys. 61 (1987) 5110.Google Scholar
[3] Kotaki, H., Nakano, M., Hayashida, S., Matsuoka, T., Kakimoto, S., Nakano, A., Uda, K., Sato, Y., in IEDM Tech. Dig. (1995) 457.Google Scholar
[4] Kittl, J.A., Prinslow, D.A., Apte, P.P., Pas, M.F., Appl. Phys. Lett. 67 (1995) 2308.Google Scholar
[5] Maex, K., Materials Science and Engineering R11, 53 (1993).Google Scholar
[6] von Alimén, M., Lau, S.S., Sheng, T.T., Wittmer, M., in Laser and Electron Beam Processing of Materials, edited by White, C.W. and Peercy, P.S. (Academic, New York, 1980), p. 524.Google Scholar
[7] D'anna, E., Leggieri, G., Luches, A., Perrone, M.R., Majni, G., Catalano, I., in Laser Processing and Diagnostics, edited by Bauerle, D. (Springer, Berlin, 1984), p. 187.Google Scholar
[8] D'anna, E., Leggieri, G., Luches, A., Appl. Phys. A 45 (1988) 325.Google Scholar
[9] Kramer, K.-J., Talwar, S., Lewis, L.T., Davison, J.E., Williams, K.A., Benton, K.A., Weiner, K.H., Appl. Phys. Lett. 68 (1996) 2320.Google Scholar