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Laser-Assisted Low Temperature Deposition of WSix from WF6 and SiH4

Published online by Cambridge University Press:  22 February 2011

R. Izquierdo ,
P. Desjardins ,
N. Elyaagoubi  and
M. Meunier
R. Izquierdo
Affiliation:
Groupe des Couches Minces and éepartement de Génie Physique, Ecole Polytechnique de Montréal, Québec, Canada, H3C 3A7.
P. Desjardins
Affiliation:
Groupe des Couches Minces and éepartement de Génie Physique, Ecole Polytechnique de Montréal, Québec, Canada, H3C 3A7.
N. Elyaagoubi
Affiliation:
Groupe des Couches Minces and éepartement de Génie Physique, Ecole Polytechnique de Montréal, Québec, Canada, H3C 3A7.
M. Meunier
Affiliation:
Groupe des Couches Minces and éepartement de Génie Physique, Ecole Polytechnique de Montréal, Québec, Canada, H3C 3A7.
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Abstract

A laser direct writing system has been developed for low temperature deposition of WSix on TiN from a gas mixture of WF6 and SiH4-. An Ar+ laser (488 nm, 1.5 W) and a diode laser (796 nm, 1.0 W) are used as photon sources. Lines are written at scan speeds of up to 100 μ/s from a flowing gas mixture of WF6 and SiH4 diluted in Ar. Lines 1.5 to 11 nm wide and 20 to 180 nmthick are obtained at a writing speed of 100 μ/s with the Ar+ laser. Lines written using the diode laser are typically 4 to 12 μm wide and 160 to 860 nm thick. W/Si ratio in the deposits, as measured by Auger electron spectroscopy (AES), isbetween 1.5 and 1.8.

Surface analysis of the interaction of this gas mixture with the TiN surface without laser irradiation shows that W, Si and F are adsorbed on the surface when exposed simultaneously to WF6 and SiH4 producing an adsorbed layer where W/Si ratio is 1.3 and F/W ratio 1.7.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 209
Copyright
Copyright © Materials Research Society 1993

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References

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