Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-26T21:03:37.470Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser-Assisted Local Etching of Gallium Arsenide

Published online by Cambridge University Press:  21 February 2011

M. Takai ,
J. Tokuda ,
H. Nakai ,
K. Gamo  and
S. Namba
M. Takai
Affiliation:
Faculty Of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
J. Tokuda
Affiliation:
Faculty Of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
H. Nakai
Affiliation:
Faculty Of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
K. Gamo
Affiliation:
Faculty Of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
S. Namba
Affiliation:
Faculty Of Engineering Science, Osaka University Toyonaka, Osaka 560, Japan
Get access

Abstract

Pyrolytic local etching of GaAs using focused Ar laser beams in C12 or CCl4 gas atmospheres has been performed to investigate the possibility of maskless etching processes by laser beams. Etching rates from 0.3 to 40 μ/scan with an etched linewidth down to 5 μ were obtained. In the case of CC1 4 , a carbon line buried in GaAs was obtained for a single scan of a laser beam at a pressure above 80 Torr with low scanning speeds or at a pressure above 120 Torr.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 211
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ehrlich, D. J., Osgood, R. M. Jr., and Deutsch, T. F., IEEE J. Quantum Electron. QE–16, 1233 (1980).CrossRefGoogle Scholar
2. von Gutfeld, R. J. and Hodgson, R. T., Appl. Phys. Lett. 40, 352 (1982).CrossRefGoogle Scholar
3. Ehrlich, D. J., Osgood, R. M. Jr., and Deutsch, T. F., Appl. Phys. Lett. 36, 698 (1980).CrossRefGoogle Scholar
4. Tucker, A. W. and Birnbaum, M., IEEE Electron Device Lett. EDL4, 39 (1983).CrossRefGoogle Scholar
5. Gibson, G. E. and Bayliss, N. S., Phys. Rev. 44, 188 (1933).CrossRefGoogle Scholar
6. Baranauskas, V., Mammana, C. I. Z., Klinger, R. E., and Greene, J. E., Appl. phys. Lett. 36, 930 (1980).CrossRefGoogle Scholar