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Laser Stimulated Deposition of GaAs, GaAsP and GaAsP-GaAs Superlattices

Published online by Cambridge University Press:  28 February 2011

N. H. Karam ,
S. M. Bedair ,
N. A. El-Masry  and
D. Griffis
N. H. Karam
Affiliation:
Dept. of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911
S. M. Bedair
Affiliation:
Dept. of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911
N. A. El-Masry
Affiliation:
Dept. of Materials Engineering, North Carolina State University Raleigh, North Carolina 27695
D. Griffis
Affiliation:
Dept. of Materials Engineering, North Carolina State University Raleigh, North Carolina 27695
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Abstract

An Ar+ ion laser has been used for direct writing of GaAs and GaAsP single crystal films on thermally biased GaAs substrates. Multiple scanning of the laser beam at speeds in the range 100–200 μm/s at carefully selected growth conditions resulted in single crystalline selectively deposited films. Photoluminescence indicates that these deposited films have optical properties that are comparable with the conventionally (MOCVD) grown material. Laser beam irradiation has been used to form a superlattice (SL) structure which has been demonstrated in the GaAsP-GaAs system. When a GaAs substrate is exposed to fluxes of AsH3, PH3 and TMG at 500°C, only GaAs will be deposited because of the insufficient cracking of PH3. However, localized laser heating results in GaAsP deposition. A GaAsP-GaAs superlattice with a period of about 400 Å has been synthesized. This laser induced technique can thus have potential applications in the generation of abrupt interfaces without the use of shutters as in MBE or gas switching as in MOCVD.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 241
Copyright
Copyright © Materials Research Society 1987

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References

1. Christensen, C.P. and Lakin, K.M., Appl. Phys. Lett., 32, 354 (1978).CrossRefGoogle Scholar
2. Allen, S.D., et. al., Proceedings of SPIE, The Inter. Soc. for Optical Eng., Los Angeles, CA, 459, 42 (1984).Google Scholar
3. Bedair, S.M., Whisnant, J.K., Karam, N.H., Tischler, M.A. and Katsuyama, T., Appl. Phys. Lett., 48, 174 (1986).CrossRefGoogle Scholar
4. Karam, N.H., EI-Masry, N.A. and Bedair, S.M., Appl. Phys. Lett., 49, 880 (1986).Google Scholar
5. Bedair, S.M., Whisnant, J.K., Karam, N.H., Griffis, D., El-Masry, N.A. and Stadelmayer, H.H., J. Cryst. Growth, 77, 229 (1986).Google Scholar
6. Karam, N.H., El-Masry, N.A. and Bedair, S.M., Proceedings of The 13th Int. Symp. on GaAs and related Comp .Conf. at Las Vegas (1986).Google Scholar
7. Aoyagi, Y., Masuda, S., Namba, S., and Doi, A., Appl. Phys. Lett., 47, 95 (1985).CrossRefGoogle Scholar
8. Donnelly, V.M., Gava, M., Long, J. and Karlicek, R.F., Appl. Phys. Lett., 44, 10 (1984).Google Scholar
9. Ehrlich, D.J., Osgood, R.M. and Deutsch, T.F., Appl. Phys. Lett., 38, 946 (1981); J. Vac. Sci. Technol., 21, 23 (1982).Google Scholar
10. Froidevaux, Y. Rytz., Salathe', R.P., Gilgen, H.H. and Weber, H.P., Appl. Phys. A 27, 133(1982).Google Scholar
11. Moody, J.E. and Hiendel, R.H., J. Appl. Phys. 53(6), 4364 (1982).Google Scholar
12. Lax, M., J. Appl. Phys., 48, 3919 (1977).Google Scholar