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Laser Processing of Amorphous Silicon for Polysilicon Devices, Circuits and Flat-Panel Imagers

  • J. B. Boyce (a1), R. T. Fulks (a1), J. Ho (a1), J. P. Lu (a1), P. Mei (a1), R. A. Street (a1), K. F. Van Schuylenbergh (a1) and Y. Wang (a1)...

Abstract

Pulsed excimer-laser processing of amorphous silicon on non-crystalline substrates allows for the fabrication of high-quality polysilicon thin-film transistors (TFTs). It also provides procedures for doping self-aligned amorphous silicon TFTs. In addition, laser-crystallized polysilicon exhibits some interesting materials properties, such as, large lateral grain growth with a corresponding enhancement in the electron mobility. Under optimized processing conditions, excellent polysilicon TFTs with high mobilities, sharp turn on, low off-state leakage currents and good spatial uniformity have been achieved. These improved parameters, particularly the low off-state leakage currents and good uniformity, enable not only displays but also the moredemanding flat-panel imaging arrays to be fabricated in polysilicon. Results on both polysilicon CMOS circuits and a polysilicon flat-panel imager are presented.

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Laser Processing of Amorphous Silicon for Polysilicon Devices, Circuits and Flat-Panel Imagers

  • J. B. Boyce (a1), R. T. Fulks (a1), J. Ho (a1), J. P. Lu (a1), P. Mei (a1), R. A. Street (a1), K. F. Van Schuylenbergh (a1) and Y. Wang (a1)...

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