Skip to main content Accessibility help
×
Home

Laser Photolytic Deposition of Thin Films*

  • P. K. Boyer (a1), C. A. Moore (a1), R. Solanki (a1), W. K. Ritchie (a1), G. A. Roche (a1) and George J. Collins (a1)...

Abstract

An excimer laser is used to photochemically deposit thin films of silicon dioxide, silicon nitride, aluminum oxide, and zinc oxide at low temperatures (100–350deg;C). Deposition rates in excess of 3000 Å/min and conformal coverage over vertical walled steps were demonstrated. The films exhibit low defect density and high breakdown voltage and have been characterized using IR spectrophotometry, AES, and C-V analysis. Device compatibility has been studied by using photodeposited films as interlayer dielectrics, diffusion masks, and passivation layers in production CMOS devices.

Additionally, we have deposited metallic films of Al, Mo, W, and Cr over large (>5 cm2) areas using UV photodissociation of trimethylaluminum and the refractory metal hexacarbonyls. Both shiny metallic films as well as black particulate films were obtained depending on the deposition geometry. The black films are shown to grow in columnar grains. The depositions were made at room temperature over pyrex and quartz plates as well as silicon wafers. We have examined the resistivity, adhesion, stress and step coverage of these films. The films exhibited resistivities at most ∼20 times that of the bulk materials and tensile stress no higher than 7 × 109 dynes/cm2

Copyright

Footnotes

Hide All
*

Present Address: Johns Hopkins University, Department of Physics, Baltimore, MD 21218.

+

NCR Microelectronics, Fort Collins, CO 80526

**

Present address: Thermco Inc., Orange, CA 92668.

*

This work supported by the Office of Naval Research.

Footnotes

References

Hide All
1. Su, S., Solid State Technology 24, 72 (1981).
2. Lepselter, M. P. and Lynch, W. T., in VLSI Electronics Microstructure Science, edited by Einspruch, N.G. (Academic, New York, 1971) p. 87.
3. Zavelovich, J., Rothschild, M., Gornik, W., and Rhodes, C. K., J. Chem. Phys. 74(12), 15 June 1981, and
3a Ashford, M., Macpherson, M. T., and Simons, J. P., in Topics in Current Chemistry, Vol. 86, (Springer–Verlag, Berlin, 1979) p. 22.
4. Bowers, J. E., Thornton, R. L., Khuri-Yakub, B. T., Junemian, R. L., and Kino, G. S., Appl. Phys. Lett. 41, 805 (1982).
5. Solanki, R., Boyer, P. K., Mahan, J. E., and Collins, G. J., Appl. Phys. Lett. 38, 572 (1981).
6. Chu, J. K., Tang, C. C., and Hess, D. W., Appl. Phys. Lett. 41, 75 (1982).
7. Kaplan, L. H. and D'Heurle, F. M., J. Electrochem. Soc. 117, 693, (1970).
8. Osgood, R. M. and Ehrlich, D. J., Opt. Lett. 7, 385 (1982).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed