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Laser Induced Defects and Materials Interactions in the V-Si System*

Published online by Cambridge University Press:  15 February 2011

B. R. Appleton ,
B. Stritzker ,
C. W. White ,
J. Narayan ,
J. Fletcher ,
O. Meyer  and
S. S. Lau
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
B. Stritzker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
J. Fletcher
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
O. Meyer
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
S. S. Lau
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
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Abstract

Pulsed laser annealing has been evaluated as a technique for fabricating superconducting V3 Si from multilayer V-Si samples, and the nature of laser-induced defects in V3 Si single crystals has been examined. Correlated analyses by ion scattering, ion channeling, Tc measurements and TEM were used to examine the composition and structure of samples subjected to single and multiple laser pulses. It was observed that although the superconducting A15 phase could be formed by pulsed laser mixing, the associated rapid quenching effects introduced defects which were not completely removed by thermal annealing to 925 K for 1 hour. Ion channeling and TEM studies of V3 Si single crystals showed that pulsed laser irradiation caused microcracks to develop in the surface, probably from mechanical stresses induced by thermal gradients.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 607
Copyright
Copyright © Materials Research Society 1981

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Footnotes

+

Guest scientist from Institute fur Festkorforschung, KFA, Julich, Germany.

++

Guest scientist from Nuclear Research Center, Karlsruhe, Germany.

**

University of California at San Diego, La Jolla, California.

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7409-eng-26 with Union Carbide Corporation.

References

REFERENCES

1. Laser-Solid Interactions and Laser Processing-1978 (ed. by Ferris, S. D., Leamy, H. J. and Poate, J. M., AlP Conference Proceedings No. 50, American Institute of Physics, New York, 1979).Google Scholar
2. Laser and Electron Beam Processing of Materials (ed. by White, C. W. and Peercy, P. S., Academic Press, New York, 1980).Google Scholar
3. Applications of Ion Beams to Materials 1975, The Institute of Phys. Conf. Series No. 28, ed. by Carter, G. and Colligon, J. S., London, 1976.Google Scholar
4. Treatise on Materials Science and Technology, Vol 18, Ion Implantation, ed. by Hirvonen, J. K., Academic Press, New York, 1980.Google Scholar
5. Appleton, B. R. et al. , Ref. 2, p. 714.Google Scholar
6. Sweedler, A. R., Cox, D. E. and Moehleche, S., J. Nucl. Mater. 72, 50 (1978).CrossRefGoogle Scholar
7. Meyer, O., Mannard, H. and Phrilingose, E., Applications of Ion Beams to Metals, ed. by Picraux, S. T., EerNisse, E. P. and Vook, F. L., Plenum Press, New York, 1974, p. 15.CrossRefGoogle Scholar
8. Besslein, B. et al. , Phys. Rev. Lett. 53A, 49 (1975).CrossRefGoogle Scholar
9. Poate, J. M. et al. , Phys. Rev. Lett. 37, 1308 (1976).Google Scholar
10. Meyer, O. and Linker, G., J. Low Temp. Phys. 38, 747 (1980).CrossRefGoogle Scholar
11. Mahajan, S. et al. , Appl. Phys. Lett. 33, 972 (1978).Google Scholar
12. Meyer, O., Thompson, J. R., Appleton, B. R. and White, C. W., to be published.Google Scholar
13. Lau, S. S. et al. , Ref. 2, p. 511.Google Scholar
14. Meyer, O., Thompson, J. R., Appleton, B. R., Sekula, S. T. and White, C. W., to be published.Google Scholar
15. Larson, B. C., White, C. W. and Appleton, B. R., Appl. Phys. Lett. 32, 801 (1978).Google Scholar
16. Appleton, B. R. et al. , Ref.l, p. 291.Google Scholar
17. White, C. W. et al. , “Kinetic Effects and Mechanisms Limiting Substitutional Solubility in the Formation of Supersaturated Alloys by Pulsed Laser Annealing,” these proceedings.Google Scholar
18. Sweedler, A. R., Schweitzer, D. G. and Webb, G. W., Phys. Rev. Lett. 33, 168 (1974).Google Scholar
19. Kaufmann, R. and Meyer, O., Rad. Effects 40, 97 and 161 (1979).CrossRefGoogle Scholar
20. Meyer, O. and Seeber, B., Solid State Commun. 22, 603 (1977).Google Scholar
21. Testardi, L. R. et al. , Phys. Rev. Lett. 39, 716 (1977).CrossRefGoogle Scholar
22. Meyer, O., Kaufmann, R., Appleton, B. R. and Chang, Y. K., to be published.Google Scholar