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Laser Direct-Metallization of Silicon Carbide without Metal Deposition

Published online by Cambridge University Press:  01 February 2011

I.A. Salama ,
A. Kar  and
N.R. Quick
I.A. Salama
Affiliation:
Laser-Aided Manufacturing, Materials and Micro-Processing Laboratory (LAMMP) School of Optics/CREOL, University of Central Florida Orlando, FL 32816-2700, USA
A. Kar
Affiliation:
Laser-Aided Manufacturing, Materials and Micro-Processing Laboratory (LAMMP) School of Optics/CREOL, University of Central Florida Orlando, FL 32816-2700, USA
N.R. Quick
Affiliation:
AppliCote Associates, LLC, 894 Silverado Court Lake Mary, FL 32746, USA
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Abstract

Laser direct-write (LDW) is used for in-situ metallization in single crystal 4H- and 6H-SiC wafers without metal deposition. Nanosecond-pulsed Nd:YAG (λ= 1064 and 532 nm) and excimer (λ = 193, 248 and 351 nm) lasers are utilized to create metal-like conductive phases in both n-type and p-type SiC wafers. Frequency-doubled Nd:YAG irradiation(Ephoton < Eg) induces a carbon rich conductive phase due to thermal decomposition of SiC. However, pulsed excimer laser irradiation (Ephoton > Eg) produces a Si- rich conductive phases due to carbon photo ablation. The Schottky barrier heights (SBH) between the laser-metallized layer and the original n-type SiC (ND = 1018 cm-3) is determined to be 0.8 eV and 1.0 eV by the current-voltage and capacitance-voltage measurements at room temperature, respectively. Linear transmission line method pattern is directly fabricated in n-type doped (ND=1018cm-3) SiC substrate by pulsed laser irradiation allowing to extract the specific contact resistance (rc)of the laser fabricated metal-like tracks (rc= 0.04-0.12 Ωcm2).The specific contact resistance is unchanged after annealing up to 3 hrs at 950°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C2.10
Copyright
Copyright © Materials Research Society 2003

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