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Laser Annealing of Ferroelectric SrBi2Ta2O9, Pb(ZrXTi1-X)O3 and CeMnO3 Thin Films

  • N. M. Sbrockey (a1), J. D. Cuchiaro (a1), L. G. Provost (a1), C. E. Rice (a1), S. Sun (a1), G. S. Tompa (a1), R. L. DeLeon (a2) and T. S. Kalkur (a3)...

Abstract

Excimer laser annealing studies were conducted of SrBi2Ta2O9, Pb(ZrxTi1-x)O3 and CeMnO3 thin films. The main incentive was to develop a low temperature process for SrBi2Ta2O9 thin films, which typically require a 750 C anneal to crystallize and achieve optimum ferroelectric properties. The results show that room temperature laser annealing can crystallize SrBi2Ta2O9, with a strong (200) preferred orientation. The Pb(ZrxTi1-x)O3 and CeMnO3 thin films investigated in this study were crystalline as deposited. Laser annealing of the Pb(ZrxTi1-x)O3 and CeMnO3 films did not result in a significant increase in crystallinity, as evidenced by the intensities of the x-ray diffraction peaks. Electrical characterization of laser annealed SrBi2Ta2O9 thin films showed good dielectric properties and the onset of ferroelectric behavior. Low temperature laser annealing is shown to be a viable approach to enable integration of ferroelectric SrBi2Ta2O9 films with silicon based micro-electronics, for ferroelectric memory applications.

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Laser Annealing of Ferroelectric SrBi2Ta2O9, Pb(ZrXTi1-X)O3 and CeMnO3 Thin Films

  • N. M. Sbrockey (a1), J. D. Cuchiaro (a1), L. G. Provost (a1), C. E. Rice (a1), S. Sun (a1), G. S. Tompa (a1), R. L. DeLeon (a2) and T. S. Kalkur (a3)...

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