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Laser and Thermal Annealing of Co-Implanted Si Studied by Mossbauer Spectroscopy

  • G. Langouche (a1), M. de Potter (a1), M. Van Rossum (a1), J. de Bruyn (a1), I. Dezsi (a1) (a2) and R. Coussement (a1)...

Abstract

Mössbauer spectroscopy was used to study the lattice location of Fe in Si. Strikingly different spectra were recorded depending on the implantation dose and implantation temperature. Drastic changes were also observed in the spectra upon thermal treatment or laser irradiation of the samples. Implantation profiles of several of these sources were also measured. Laser irradiation and thermal annealing above 400° C results in surface segregation of the implanted 57 Co activity.

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Laser and Thermal Annealing of Co-Implanted Si Studied by Mossbauer Spectroscopy

  • G. Langouche (a1), M. de Potter (a1), M. Van Rossum (a1), J. de Bruyn (a1), I. Dezsi (a1) (a2) and R. Coussement (a1)...

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