Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-25T15:37:50.062Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Ablation Deposited YBa2Cu3Ox, Thin Films on YSZ/Si(100)

Published online by Cambridge University Press:  01 January 1992

F. Sánchez ,
M. Varela ,
X. Queralt ,
R. Aguiar  and
J.L. Morenza
F. Sánchez
Affiliation:
Universitat de Barcelona, Departament de Fisica Aplicada i Electrònica, Avda. Diagonal 647, E-08028 Barcelona, Spain
M. Varela
Affiliation:
Universitat de Barcelona, Departament de Fisica Aplicada i Electrònica, Avda. Diagonal 647, E-08028 Barcelona, Spain
X. Queralt
Affiliation:
Universitat de Barcelona, Departament de Fisica Aplicada i Electrònica, Avda. Diagonal 647, E-08028 Barcelona, Spain
R. Aguiar
Affiliation:
Universitat de Barcelona, Departament de Fisica Aplicada i Electrònica, Avda. Diagonal 647, E-08028 Barcelona, Spain
J.L. Morenza
Affiliation:
Universitat de Barcelona, Departament de Fisica Aplicada i Electrònica, Avda. Diagonal 647, E-08028 Barcelona, Spain
Get access

Abstract

Superconducting YBa2Cu3Ox (YBCO) thin films have been deposited on Si(100) substrates with yttria-stabilized zirconia (YSZ) buffer layers by laser ablation. Buffers have been obtained by laser ablation as well. The films have been characterized by scanning electron microscopy, x-ray diffractometry, secondary ion mass spectrometry, and four-contact electrical resistivity measurements. Secondary ion mass spectrometry results indicate very low interdiffusion between Si, YSZ and YBCO. The best YBCO films are textured with c axis perpendicular to the substrate and their resistance shows a normal state metallic behavior with zero resistance at temperatures higher than 80 K. The properties of YBCO films have been related with the substrate temperature and oxygen partial pressure during deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 299
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wu, X.D., Dijkkamp, D., Ogale, S.B., Inam, A., Chase, E.W., Miceli, P.F., Chang, C.C., Tarascon, J.M. and Venkatesan, T., Appl.Phys. Lett. 51, 861 (1987).Google Scholar
2. Simon, R.W., Platt, C.E., Lee, A.E., Lee, G.S., Daly, K.P., Wire, M.S., Luine, J.L. and Urbanik, M., Appl. Phys. Lett. 53, 2677 (1988).Google Scholar
3. Wiener-Avnear, E., Kerber, G.L., McFall, J.E., Spargo, J.W. and Toht, A.G., Appl. Phys. Lett. 56, 1802 (1990).Google Scholar
4. SAnchez, F., Varela, M., Queralt, X., Aguiar, R. and Morenza, J.L., Appl. Phys. Lett. 61, 2228 (1992).Google Scholar
5. Wittanachchi, S., Patel, S., Kwok, H.S. and Shaw, D.T., Appl. Phys. Lett. 54, 578 (1989).Google Scholar
6. Fork, D.K., Ponce, F.A., Tramontana, J.C. and Geballe, T.H., Appl. Phys. Lett. 58, 2294 (1991).Google Scholar
7. Luo, L., Wu, X.D., Dye, R.C., Muenchausen, R.E., Foltyn, S.R., Coulter, Y., Maggiore, C.J. and Inoue, T., Appl. Phys. Lett. 59, 2043 (1991).Google Scholar
8. SAnchez, F., Varela, M., Queralt, X., Garcia-Cuenca, M.V., Aguiar, R. and Morenza, I.L., Physica C 195, 47 (1992).Google Scholar
9. Tiwari, P., Kanetkar, S.M., Sharan, S. and Narayan, J., Appl. Phys. Lett. 57, 1578 (1990).Google Scholar
10. Ogale, S.B., Vispute, R.D. and Rao, R.R., Appl. Phys. Lett. 57, 1805 (1990).Google Scholar
11. Habermeier, H.U., Beddies, G., Leybold, B., Lu, G. and Wagner, G., Physica C 180, 17 (1991).Google Scholar
12. Fork, D.K., Fenner, D.B., Connell, G.A.N., Phillips, J.M. and Geballe, T.H., Appl. Phys. Lett. 57, 1137 (1990).Google Scholar
13. Ockenfuf, G., Baudenbacher, F., Prusseit-Elffroth, W., Hirata, K., Berberich, P. and Kinder, H., Physica C 180, 30 (1991).Google Scholar
14. Singh, R.K., Narayan, J. and Singh, A.K., J. Appl. Phys. 67, 3452 (1990).Google Scholar
15. Garrison, S.M., Newman, N., Cole, B.F., Char, K. and Barton, R.W., Appl. Phys. Lett. 58, 2168 (1991).Google Scholar
16. Sakeek, H.F., Higgins, M., Graham, W.G., Morrow, T., Turner, R.J. and Walmsley, D.G., J. Appl. Phys. 70, 2455 (1991).Google Scholar
17. Lee, S.H., Bae, S.C., Kang, J.G., Lee, H.J., Shin, H.J. and Ku, J.K., J. Appl. Phys. 70, 5661 (1991).Google Scholar
18. Pinto, R., Pai, S.P., D'Souza, C.P., Gupta, L.C., Viajayaraghava, R., Kumar, D. and Sharon, M., Physica C 196, 264 (1992).Google Scholar
19. Sánchez, F., Varela, M., Queralt, X., García-Cuenca, M.V., Palau, J., Aguiar, R. and Morenza, J.L., Adv. Mater. Opt. Electr. (in the press).Google Scholar
20. Ece, M., Vook, R.W. and Allen, J.P., J. Mater. Res. 6, 252 (1991).Google Scholar
21. Tranquada, J.M., Heald, S.M., Moodenbaugh, A.R. and Xu, Y., Phys. Rev. B 38, 8893 (1988).Google Scholar