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Large-Area Pulsed Laser Deposition of Silicon Carbide Films

Published online by Cambridge University Press:  01 February 2011

D. Yang
Affiliation:
Integrated Manufacturing Technologies Institute, National Research Council Canada, 800 Collip Circle, London, ON, Canada N6G 4X8
L. Xue
Affiliation:
Integrated Manufacturing Technologies Institute, National Research Council Canada, 800 Collip Circle, London, ON, Canada N6G 4X8
C. M. Mccague
Affiliation:
Department of Chemistry, University of Western Ontario, London, ON, Canada N6A 5B7
P. R. Norton
Affiliation:
Department of Chemistry, University of Western Ontario, London, ON, Canada N6A 5B7
C. S. Zhang
Affiliation:
Department of Chemistry, University of Western Ontario, London, ON, Canada N6A 5B7
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Abstract

Silicon carbide (SiC) thin films are attractive for a wide range of applications ranging from microelectronic and opto-electronic devices to protective and tribological coatings. In this paper, we will demonstrate that silicon carbide films can be successfully deposited by pulsed laser deposition (PLD) technique over large areas, with good uniformity in thickness, composition, and film-specific properties.

Amorphous SiC films were grown on silicon wafers of 75-mm diameter over a temperature range of 25 – 650°C using a KrF excimer laser at a wavelength 248 nm and a repetition rate of 100 Hz. The large-area uniform coverage was obtained by rastering the laser beam over the radius of a rotating SiC target of 90-mm diameter, while the substrate was rotated simultaneously. The uniformity of film composition over the 75-mm wafers was characterized by Auger electron spectroscopy (AES), while the crystallinity of films was investigated by X-ray diffraction (XRD). The morphology of the films was evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The thickness of the coatings, and the index of refraction, n, along the wafer radii were measured optically using a spectrophotometer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

1- Tang, Y., Wang, Y., Tang, H., Li, K. and Shi, J., Material Research Bulletin, 32(9), 1229(1997).Google Scholar
2- Brown, D. M., Downey, E., Grezzo, M., Kretchmer, J., Krishnamrthy, V., Hennessy, W., Michon, G., Solid State Electronics 59, 1531(1996).Google Scholar
3- dreike, P. L., Fleetwood, D.M., King, D.B., Sprauer, D.C., Zipperian, T.E., IEET Trans. Compon., Packag., Manuf. Technol., 17(A), 594(1994).Google Scholar
4- Christidis, T., Tabbal, M., Isber, S., Khakani, M. A. El, Chaker, M., Applied Surface Science 184, 268(2001).Google Scholar
5- Loboda, M. J. and Ferber, M. K., J. Mater. Res. 8, 2908(1993).10.1557/JMR.1993.2908Google Scholar
6- El, M. A. Khakani, Chaker, M., O'Hern, M. E. and Oliver, W. C., J. Appl. Phys. 82(9), 4310(1997).Google Scholar
7- Botton, G. (Private communication).Google Scholar
8- Mehregany, M., Zorman, C. A., Roy, S., Fleischman, A. J., Wu, C.H. and Rajan, N., International Materials Reviews 45(3), 85(2000).Google Scholar
9- Wahab, Q., Hultman, L., Ivanov, I. P., Willander, M., and Sundern, J.E., J. Mater. Res. 10, 1349(1995).Google Scholar
10- Schmit, J., Troffer, T., Christiansen, K., Christiansen, S., Helbig, R., Pensl, G. and Strunk, H. P., Mater. Sci. Forum 264-268, 247(1998).Google Scholar
11- Reitano, R. and Baeri, P., Europhysics Letters 43(5), 565(1998).Google Scholar
12- EI Khakani, M. A., Chaker, M., O'Hern, M. E. and Oliver, W. C., J. Appl. Phys. 82(9), 4310(1997).10.1063/1.366249Google Scholar
13- Rimai, L., Ager, R., Hangas, J., Logothetis, E. M., Abu-Ageel, N. and Aslam, M., J. Appl. Phys. 73, 8242 (1993).10.1063/1.353442Google Scholar
14- Stan, M. A., Patton, M. O., Warner, J. D., Yang, J. W. and Pirouz, P., Appl. Phys. Lett. 64, 2667(1994).Google Scholar
15- Pelt, J. S., Ramsey, Matthew E. and Durbin, S. M., Thin Solid Films 371, 72(2000).Google Scholar
16- Rimai, L., Ager, R., Weber, W. H., Hangas, J., Samman, A. and Zhu, W., J. Appl. Phys. 77, 6601(1995).Google Scholar
17- Boughaba, S., Sproule, G. I., McCaffrey, J. P., Islam, M. and Graham, M. J., Thin Soild Films 358, 104(2000).Google Scholar
18- Chen, L.C., in Pulsed Laser Deposition, edited by Chrisey, D. B. and Hubler, G. K. (John Wiley, New York, 1994), p. 167.Google Scholar
19- Kelliher, J. T., Massuda, M., DiFonzo, P. A. and Neal, T. R., Mat. Res. Soc. Symp. Proc. 495, 159(1998).Google Scholar