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Large-Area Film Structure Consisted by Aggregation of Zinc Oxide Micro-Whiskers

Published online by Cambridge University Press:  11 February 2011

Shuji Tokita ,
Shigeo Ohshi  and
Hidetoshi Saitoh
Shuji Tokita
Affiliation:
TOKITA CVD Systems Co., Hinode-cho, Yoshida, Nishikannbara-gun, Niigata, 959–0231, JAPAN
Shigeo Ohshi
Affiliation:
Nagaoka Univ. Tech. Dept. of Chemistry, Kamitomioka, Nagaoka, Niigata, 940–2188, JAPAN
Hidetoshi Saitoh
Affiliation:
Nagaoka Univ. Tech. Dept. of Chemistry, Kamitomioka, Nagaoka, Niigata, 940–2188, JAPAN
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Abstract

We developed a chemical-vapor deposition (CVD) apparatus with a 0.5×240 mm2 slit-type nozzle that scans at an area of 240×315 mm2 in the atmosphere. This apparatus forms uniform oxide crystals on substrates through the decomposition process of precursors emitted from the nozzle. In this study, ZnO whiskers were synthesized on a single-crystalline 8-inch wafer of (100)-oriented silicon using this apparatus. Morphological and crystallographic properties of the samples were evaluated using scanning electron microscopy and X-ray diffractometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W18.1
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Tanaka, N., Ohshio, S. and Saitoh, H., J. Ceram. Soc. Jpn., 105 (1997) 551.Google Scholar
2. Saitoh, H., Sunayama, H., Tanaka, N. and Ohshio, S., Mater. Sci. & Eng. Serv. Soc. (1998) 165.Google Scholar
3. Saitoh, H., Sunayama, H., Tanaka, N. and Ohshio, S., J. Ceram. Soc. Jpn., 106 (1998) 1051.Google Scholar
4. Tokita, S., Tanaka, N. and Saitoh, H., Jpn. J. Appl. Phys., 39 (2000) 169.Google Scholar
5. Satoh, Y., Ohshio, S. and Saitoh, H., Jpn. J. Appl. Phys., 41 (2002) L1253.Google Scholar
6. Saitoh, H., Okada, Y. and Ohshio, S., J. Mater. Sci., 37 (2002) 4597.Google Scholar
7. Saitoh, H., Takayama, K., Sugata, M., Ohshio, S., Takada, H., Yamazaki, Y., Yamaguchi, Y. and Ono, Y., Jpn. J. Appl. Phys., 41 (2002) L1250.Google Scholar
8. Saitoh, H., Tanaka, N., Ohshio, S., Chem. Vapor Deposit. 8 (2002) 267.Google Scholar
9. Satoh, M., Tanaka, N., Ueda, Y., Ohshio, S. and Saitoh, H., Jpn. J. Appl. Phys., 38 (1999) 586.Google Scholar
10. Saitoh, H., Satoh, M., Tanaka, N., Ueda, Y. and Ohshio, S., Jpn. J. Appl. Phys., 38 (1999) 6873.Google Scholar
11. Saitoh, H., Satoh, M. and Ohshio, S., J. Ceram. Soc. Jpn., 110 (2002) 693.Google Scholar
12. Saitoh, H., Namioka, Y., Sugata, H. and Ohshio, S., Jpn. J. Appl. Phys., 40 (2001) 6024.Google Scholar
13. Ohkawara, Y., Naijo, T., Washio, T., Ohshio, S., Ito, H. and Saitoh, H., Jpn. J. Appl. Phys., 40 (2001) 7013.Google Scholar
14. Saitoh, H., Akasaka, H., Washio, T., Ohkawara, Y., Ohshio, S. and Ito, H., Jpn. J. Appl. Phys. 41 (2002) 6169.Google Scholar
15. Tokita, S., Ohshio, S. and Saitoh, H., J. Ceram. Soc. Jpn., (submitted)Google Scholar
16. Zu, P., Tang, Z. K., Wong, G. K. L., Kawasaki, M., Ohtomo, A., Koinuma, H. and Segawa, Y., Solid state comm. 103 (1997) 459.Google Scholar
17. Sekiguchi, T., Ohashi, N. and Terada, Y., Jpn. J. Appl. Phys. 36 (1997) L289.Google Scholar
18. Haga, K., Kamidaira, M., Kashiwaba, Y., Sekiguchi, T. and Watanabe, H., J. Crystal. Growth 214/215 (2000) 77.Google Scholar