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Large Red Shift of PL Peak Energy in High Growth Rate a-Si:H Prepared by Hot-Wire CVD

Published online by Cambridge University Press:  17 March 2011

Daxing Han ,
Guozhen Yue ,
Jennifer Weinberg-Wolf ,
Jessica M. Owens ,
Yueqin Xu  and
Qi Wang
Daxing Han
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255
Guozhen Yue
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255
Jennifer Weinberg-Wolf
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255
Jessica M. Owens
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255
Yueqin Xu
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Qi Wang
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
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Abstract

We characterized the electronic states and microstructure of high-growth-rate a-Si:H films by employing photoluminescence (PL) and Raman spectroscopies. The growth rate was from 50 to 115 Å/s compared to the standard rate of less than 10 Å/s. For the high-growth-rate a-Si:H films, we observed typical a-Si:H features in Raman but new features in PL. The new PL features are: a) the PL peak energy is as low as ∼1.15 eV compared to the standard ∼1.4 eV at 80 K; and b) the total intensity is more than one order of magnitude higher then the standard. We suggest that the nano-scale microstructure may be responsible for the anomalous PL features.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A7.4
Copyright
Copyright © Materials Research Society 2001

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References

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