Skip to main content Accessibility help
×
Home

Large Grain Size and High Deposition Rate for Microcrystalline Silicon Prepared by VHF-GD

  • P. Hapke (a1), F. Finger (a1), M. Luysberg (a1), R. Carius (a1) and H. Wagner (a1)...

Abstract

The growth mechanism and material properties of -type µc-Si:H prepared with plasma enhanced chemical vapour deposition in the very high frequency range is investigated. By increasing the plasma excitation frequency the grain size, deposition rate and Hall mobility can be simultaneously increased without having to adjust other deposition parameters in particular the temperature. This effect is explained by an enhanced selective etching of amorphous tissue and grain boundary regions together with a sufficient supply of growth species at high frequency plasmas.

Copyright

References

Hide All
1 Prasad, K., Finger, F., Dubail, S., Shah, A. and Schubert, M., J. Non-Cryst. Solids 137&138, 681 (1991).
2 Articles in Microcrystalline Semiconductors: Materials Science & Devices edited by Fauchet, P.M., Tsai, C.C., Canham, L.T., Shimizu, I. and Aoyagi, Y. (Mater. Res. Soc. Proc. 283, Pittsburgh, PA, 1992).
3 Articles in Amorphous & Microcrystalline Semiconductors Devices, edited by Kanicki, J. (Artech House, Boston, 1992).
4 Tsai, C. C., in Amorphous Silicon and Related Materials edited by Fritzsche, H., (World Scientific Publishing Company, Singapore, 1988), p. 123.
5 Veprek, S., Sarott, F.-A. and RückschloB, M., J. Non-Cryst. Solids 137&138, 733 (1991).
6 Finger, F., Hapke, P., Luysberg, M., Carius, R., Wagner, H. and Scheib, M., Appl. Physics Lett. 65 (1994) 2588.
7 Howling, A. A., Dorier, J. L., Hollenstein, Ch., Kroll, U. and Finger, F., J. Vac. Sci. Technol. A10, 1080 (1992).
8 Finger, F., Kroll, U., Viret, V., Shah, A., Beyer, W., Tang, X.-M., Weber, J., Howling, A. and Hollenstein, Ch., J. Appl. Phys. 71, 5665 (1992).
9 Beneking, C., Finger, F. and Wagner, H., in Proc. 11th E.C. Photovoltaic Solar Energy Conference, edited by. Guimaraes, L., Palz, W., de Reyff, C., Kiess, H. and Helm, P. (Harwood Academic Pub., Chur, 1993), p. 585.
10 Kroll, U., Ziegler, Y. Meier, J., Keppner, H. and Shah, A., to be published in Mater. Res. Soc. Symp. Proc. 336 (1994).
11 Hapke, P., Luysberg, M., Carius, R., Finger, F. and Wagner, H., in Semiconductor Processing and Characterization with Lasers 1994, edited by Brieger, M., Klose, M., Dietrich, T., Schock, H.W. and Werner, J.H. (Trans Tech Publications Ltd., Aedermannsdorf, Switzerland, 1994), p. 249.
12 Luysberg, M., Hapke, P., Finger, F. and Carius, R., unpublished (1994).
13 Veprek, S., J. Chem. Phys. 57, 952 (1972).
14 Drevillon, B., Solomon, I. and Fang, M. in Microcrvstalline Semiconductors: Materials Science & Devices edited by Fauchet, P.M., Tsai, C.C., Canham, L.T., Shimizu, I. and Aoyagi, Y. (Mater. Res. Soc. Proc. 283, Pittsburgh, PA, 1992), p. 455.
15 Heintze, M., Westlake, W. and Santos, P.V, J. Non-Cryst. Solids 164–166, 985 (1993).

Related content

Powered by UNSILO

Large Grain Size and High Deposition Rate for Microcrystalline Silicon Prepared by VHF-GD

  • P. Hapke (a1), F. Finger (a1), M. Luysberg (a1), R. Carius (a1) and H. Wagner (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.