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Large Diameter Soi Wafers by Zone-Melting-Recrystallization

  • P. M. Zavracky (a1), D. P. Vu (a1), L. Allen (a1), W. Henderson (a1), H. Guckel (a2), J. J. Sniegowski (a2), T. P. Ford (a1) and J. C. C. Fan (a1)...

Abstract

A pilot production Zone-melting Recrystallization system was designed and built with a capability to handle 25 wafer batches of 4“, 5“and 6“wafers. The design addresses several production requirements including high throughput, batch processing and automation. Measurements on product wafers indicate that material quality was not sacrificed to achieve production throughput levels. Exceptional structural quality and good electrical properties have been obtained on SOI wafers produced within this system. Specifically, defect densities as low as 5 X 104 /cm2 a level an order of magnitude lower than previously reported, have been achieved while the minority carrier lifetime of up to 30 microseconds, intrinsic dopant level < 2 X 1015 /cm3 and junction leakage below 1 X 1016 amperes/cm2 are either as good as or better than previously reported values. We believe that defect free ZMR material will become a reality.

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Large Diameter Soi Wafers by Zone-Melting-Recrystallization

  • P. M. Zavracky (a1), D. P. Vu (a1), L. Allen (a1), W. Henderson (a1), H. Guckel (a2), J. J. Sniegowski (a2), T. P. Ford (a1) and J. C. C. Fan (a1)...

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