Skip to main content Accessibility help
×
Home

Lanthanum Oxide Capping Layer for Solution-Processed Ferroelectric-Gate Thin-Film Transistors

  • Tue T. Phan (a1), Trinh N. Q. Bui (a2), Takaaki Miyasako (a2), Thanh V. Pham (a1), Eisuke Tokumitsu (a2) (a3) and Tatsuya Shimoda (a1) (a2)...

Abstract

We report on the use of La2O3 (LO) as a capping layer for ferroelectric-gate thin-film transistors (FGTs) with solution-processed indium-tin-oxide (ITO) channel and Pb(Zr,Ti)O3 (PZT) gate insulator. The fabricated FGT exhibited excellent performance with a high “ON/OFF” current ratio (ION/IOFF ) and a large memory window (∆Vth ) of about 108 and 3.5 V, respectively. Additionally, a significantly improved data retention time (more than 16 hours) as compared to the ITO/PZT structure was also obtained as a result of good interface properties between the ITO channel and LO/PZT stacked gate insulator. We suggest that the LO capping layer acts as a barrier to prevent the interdiffusion and provides atomically flat ITO/LO/PZT interface. This all-oxide FGT device is very promising for future ferroelectric memories.

Copyright

References

Hide All
1. Mathews, S., Ramesh, R., Venkatesan, T., Benedetto, J., Science 276, 238 (1997).
2. Prins, M. W. J., Zinnemers, S. E., Cillessen, J. F. M., and Giesbers, J. B., Appl. Phys. Lett. 70, 458 (1997).
3. Hirooka, G., Noda, M., and Okuyama, M., Jpn. J. Appl. Phys. 43, 2190 (2004).
4. Fukushima, T., Yoshimura, T., Masuko, K., Maeda, K., Ashida, A., and Fujimura, N., Jpn. J. Appl. Phys. 47, 8874 (2008).
5. Kato, Y., Kaneko, Y., Tanaka, H. and Shimada, Y., Jpn. J. Appl. Phys. 47, 2719(2008).
6. Miyasako, T., Senoo, M., and Tokumitsu, E., Appl. Phys. Lett. 86, 162902 (2005).
7. Tokumitsu, E., Senoo, M., and Miyasako, T., Microelectronic Engineering 80, 305 (2005).
8. Tue, P. T., Miyasako, T., Trinh, B. N. Q., Tokumitsu, E., and Shimoda, T., Ferroelectrics 405, 281 (2010).
9. Miyasako, T., Trinh, B. N. Q., Onoue, M., Kaneda, T., Tue, P. T., Tokumitsu, E., and Shimoda, T., Appl. Phys. Lett. 97, 173509 (2010).
10. Tokumitsu, E. and Oiwa, T., Mater. Res. Soc. Symp. Proc. 1250, G1307 (2010).
11. Tue, P. T., Trinh, B. N. Q., Miyasako, T., Tokumitsu, E., and Shimoda, T., Microelectronics, 2010 IEEE International Conference on, pp.3235, 19-22 Dec. 2010.
12. Sakai, S., Ilangovan, R., IEEE Electron Dev. Lett. 25, 369 (2004).
13. Hirooka, G., Noda, M., and Okuyama, M., Jpn. J. Appl. Phys. 43, 2190 (2004).
14. Wilk, G. D., Wallace, R. M., and Anthony, J. M., J. Appl. Phys. 89, 5243 (2001).
15. Juan, T. P. C., Lin, C. L., Shih, W. C., Yang, C. C., Lee, J. Y. M., Shye, D. C., and Lu, J. H., J. Appl. Phys. 105, 061625 (2009).
16. Kang, S. W. and Rhee, S. W., Journal of The Electrochemical Society 149 (6) C345C348 (2002).
17. Rep, D. B. A. and Prins, M. W. J., J. Appl. Phys. 85, 7923 (1999).
18. Seager, C. H., McIntyre, D. C., Warren, W. L., and Tuttle, B. A., Appl. Phys. Lett. 68, 2660 (1996).
19. Kodama, K., Takahashi, M., Ricinschi, D., Lerescu, A. I., Noda, M. and Okuyama, M., Jpn. J. Appl. Phys. 41, 2639 (2002).
20. Ma, T. P. and Han, J. P., IEEE Electron Device Lett. 23, 386 (2002).

Keywords

Lanthanum Oxide Capping Layer for Solution-Processed Ferroelectric-Gate Thin-Film Transistors

  • Tue T. Phan (a1), Trinh N. Q. Bui (a2), Takaaki Miyasako (a2), Thanh V. Pham (a1), Eisuke Tokumitsu (a2) (a3) and Tatsuya Shimoda (a1) (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed