Article contents
Kinetics of Plasma Etching Silicon with Nitrogen Trifluoride
Published online by Cambridge University Press: 28 February 2011
Abstract
A kinetic model, composed of elementary chemical reactions, is derived to predict the etch rate of crystalline silicon with NF3 in a plasma discharge.Experimental data taken from a radial flow plasma etching reactor is used to determine the model's kinetic parameters.The rate constant for atomic fluorine reacting with <100> silicon was determined to be 1410 cm/min at 25 °C, in good agreement with a value obtained by other investigators.
- Type
- Articles
- Information
- Copyright
- Copyright © Materials Research Society 1986
References
- 4
- Cited by