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Kinetics of Plasma Etching Silicon with Nitrogen Trifluoride

Published online by Cambridge University Press:  28 February 2011

Harvey G. Stenger Jr  and
G. S. Akiki
Harvey G. Stenger Jr
Affiliation:
Dept.of chem.Engr., Lehigh University, Bethlehem PA 18015
G. S. Akiki
Affiliation:
Ibm Corporation, General Technology Division, Essex Junction Vt
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Abstract

A kinetic model, composed of elementary chemical reactions, is derived to predict the etch rate of crystalline silicon with NF3 in a plasma discharge.Experimental data taken from a radial flow plasma etching reactor is used to determine the model's kinetic parameters.The rate constant for atomic fluorine reacting with <100> silicon was determined to be 1410 cm/min at 25 °C, in good agreement with a value obtained by other investigators.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 267
Copyright
Copyright © Materials Research Society 1986

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References

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