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Kinetics of Light-Induced Degradation of a-Si:H Solar Cells Compared to I-Layer Films

Published online by Cambridge University Press:  21 February 2011

X.R. Li ,
S. Wagner ,
M. Bennett  and
S. Fonash
X.R. Li
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
M. Bennett
Affiliation:
Solarex Thin Film Division, Newtown, PA 18940
S. Fonash
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
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Abstract

We report the CPM defect density of a-Si:H material and the performance characteristics of pin solar cells during high-intensity light-soaking. In one group of experiments we compared the effects of soaking with monochromatic light from a Kr+ laser to white light from a Xe arc lamp. The effects are identical for the same electron-hole pair generation rate. In a second group of experiments we light-soaked at the two different temperatures of 50°C and 90°C. At 90°C the defect density saturates at a lower value than at 50°C, and correspondingly the cell performance parameters saturate at higher values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 899
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Banerjee, A., Guha, S., Pawlikiewicz, A., Wolf, D. and Yang, J., Amer. Inst. Phys. Conf. Proc. 234 186 (1991).Google Scholar
[2] Pawlikiewicz, A., Banerjee, A. and Guha, S., Mat. Res. Soc. Symp. Proc. 219 (1991).CrossRefGoogle Scholar
[3] Wagner, S., Xu, X., Li, X. R., Shen, D. S., Isomura, M., Delahoy, A. E., Li, X., Bennett, M., Arch, J. K., Nicque, J. -L. and Fonash, S. J., 1307, Proc. 22nd IEEE PVSC (1991).Google Scholar
[4] Yang, L., Chen, L. and Catalano, A., Amer. Inst. Phys. Conf. Proc. 234, 273 (1991).Google Scholar
[5] Tonon, T., Li, X. and Delahoy, A. E., Amer. Inst. Phys. Conf. Proc. 234, 259 (1991).Google Scholar
[6] Chen, L. and Yang, L., J. Non-CrysL Solids, 137&138 1185 (1991).CrossRefGoogle Scholar
[7] Guha, S., Huang, C-Y. and Hudgens, S.J., Appl. Phys. Lett. 45, 1 (1984).Google Scholar
[8] Redfield, D., Appl. Phys. Lett. 52, 6 (1988).CrossRefGoogle Scholar
[9] Street, R., Mater. Res. Soc. Proc. 95, 13 (1987).CrossRefGoogle Scholar
[10] Li, X. R., Wagner, S., Bennett, M. and Fonash, S. J., in these proceedings.Google Scholar
[11] Stutzmann, M., Jackson, W. B. and Tsai, C. C., Phys. Rev. B 32, 1 (1985).CrossRefGoogle Scholar
[12] Arch, J., Rubinelli, F. A., Hou, J.-Y and Fonash, S. J., J. Appl. Phys. 69, 7057 (1991).CrossRefGoogle Scholar