- Cited by 19
Carlson, D.E. Lin, G. and Ganguly, G. 2000. Temperature dependence of amorphous silicon solar cell PV parameters. p. 707.
Hata, N. Fortmann, C. M. and Matsuda, A. 2001. Changes in hydrogenated amorphous silicon upon extensive light-soaking at elevated temperature. MRS Proceedings, Vol. 664, Issue. ,
Pearce, J. Niu, X. Koval, R. Ganguly, G. Carlson, D. Collins, R.W. and Wronski, C.R. 2001. Contributions of D0 and non-D0 Gap States to the Kinetics of Light Induced Degradation of Amorphous Silicon under 1 sun Illumination. MRS Proceedings, Vol. 664, Issue. ,
Pearce, J.M. Koval, R.J. Collins, R.W. Wronski, C.R. Al-Jassim, M.M. and Jones, K.M. 2002. Correlation of light-induced changes in a-Si:H films with characteristics of corresponding solar cells. p. 1098.
Wronski, C. R. Pearce, J. M. Koval, R. J. Niu, X. Ferlauto, A. S. Koh, J. and Collins, R. W. 2002. Light Induced Defect Creation Kinetics in Thin Film Protocrystalline Silicon Materials and Their Solar Cells. MRS Proceedings, Vol. 715, Issue. ,
Dylla, T. Carius, R. and Finger, F. 2002. Electron Spin Resonance and Electronic Conductivity in Moderately Doped n-type Microcrystalline Silicon as a Probe for the Density of Gap States. MRS Proceedings, Vol. 715, Issue. ,
Biswas, R. Pan, B. C. and Ye, Y. Y. 2002. Metastability of Amorphous Silicon from Silicon Network Rebonding. Physical Review Letters, Vol. 88, Issue. 20,
Baia Neto, A.L Lambertz, A Carius, R and Finger, F 2002. Relationships between structure, spin density and electronic transport in `solar-grade' microcrystalline silicon films. Journal of Non-Crystalline Solids, Vol. 299-302, Issue. , p. 274.
Pearce, J. M. Deng, J. Collins, R. W. and Wronski, C. R. 2003. Light-induced defect states in hydrogenated amorphous silicon centered around 1.0 and 1.2 eV from the conduction band edge. Applied Physics Letters, Vol. 83, Issue. 18, p. 3725.
Su, Tining and Taylor, P.Craig 2003. Magnetic resonance measurements in hydrogenated amorphous silicon. Solar Energy Materials and Solar Cells, Vol. 78, Issue. 1-4, p. 269.
Carlson, David E. and Wronski, Christopher R. 2003. Practical Handbook of Photovoltaics. p. 281.
Vignoli, S Butté, R Meaudre, R Meaudre, M and Brenier, R 2003. Links between hydrogen bonding, residual stress, structural properties and metastability in hydrogenated nanostructured silicon thin films. Journal of Physics: Condensed Matter, Vol. 15, Issue. 43, p. 7185.
Neto, A.L.B. Dylla, T. Klein, S. Repmann, T. Lambertz, A. Carius, R. and Finger, F. 2004. Defects and structure of hydrogenated microcrystalline silicon films deposited by different techniques. Journal of Non-Crystalline Solids, Vol. 338-340, Issue. , p. 168.
Wronski, C.R. Pearce, J.M. Deng, J. Vlahos, V. and Collins, R.W. 2004. Intrinsic and light induced gap states in a-Si:H materials and solar cells—effects of microstructure. Thin Solid Films, Vol. 451-452, Issue. , p. 470.
Ahn, Jun Yong and Lim, Koeng Su 2005. Amorphous silicon solar cells with stable protocrystalline silicon and unstable microcrystalline silicon at the onset of a microcrystalline regime as i-layers. Journal of Non-Crystalline Solids, Vol. 351, Issue. 8-9, p. 748.
Carlson, David E. and Wronski, Christopher R. 2005. Solar Cells. p. 217.
Deng, J. and Wronski, C. R. 2005. Carrier recombination and differential diode quality factors in the dark forward bias current-voltage characteristics of a‐Si:H solar cells. Journal of Applied Physics, Vol. 98, Issue. 2, p. 024509.
Thompson, S. Perrey, C. R. Carter, C. B. Belich, T. J. Kakalios, J. and Kortshagen, Uwe 2005. Experimental investigations into the formation of nanoparticles in a∕nc-Si:H thin films. Journal of Applied Physics, Vol. 97, Issue. 3, p. 034310.
Pearce, J. M. Podraza, N. Collins, R. W. Al-Jassim, M. M. Jones, K. M. Deng, J. and Wronski, C. R. 2007. Optimization of open circuit voltage in amorphous silicon solar cells with mixed-phase (amorphous+nanocrystalline) p-type contacts of low nanocrystalline content. Journal of Applied Physics, Vol. 101, Issue. 11, p. 114301.
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Studies have been carried out on the kinetics of light induced changes in thin films and solar cells fabricated in different laboratories. Unlike the many studies on undiluted a-Si:H films the kinetics reported here are for 1 sun illuminations carried out to the degraded steady state (DSS). The light induced changes at temperatures from 25 to 100°C were characterized with electron mobility lifetime products and subgap absorption in films and fill factors in solar cells. The significant changes in the degradation kinetics that occur in these materials in this t mperature range have further confirmed the importance of charged defects, not only in the annealed state, but also in the degraded steady states. Results are also presented on corresponding solar cell structures, which also indicate that defects other than neutral dangling bonds have to be taken into account if any meaningful evaluation is to be made of their solar cell properties.
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