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Kinetics of Light Induced Changes in Protocrystalline Thin Film Materials and Solar Cells

Published online by Cambridge University Press:  17 March 2011

Randy Koval
Affiliation:
Center For Thin Film Devices, The Pennsylvania State University, University Park, PA, 16801
Xinwei Niu
Affiliation:
Center For Thin Film Devices, The Pennsylvania State University, University Park, PA, 16801
Joshua Pearce
Affiliation:
Center For Thin Film Devices, The Pennsylvania State University, University Park, PA, 16801
Lihong Jiao
Affiliation:
Center For Thin Film Devices, The Pennsylvania State University, University Park, PA, 16801
Gautam Ganguly
Affiliation:
BP Solarex, 3601 Lagrange Parkway, Toano, VA 23168
Jeffrey Yang
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084
Subhendu Guha
Affiliation:
United Solar Systems Corp., 1100 West Maple Road, Troy, MI 48084
Robert W. Collins
Affiliation:
Center For Thin Film Devices, The Pennsylvania State University, University Park, PA, 16801
Christopher R. Wronski
Affiliation:
Center For Thin Film Devices, The Pennsylvania State University, University Park, PA, 16801
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Abstract

Studies have been carried out on the kinetics of light induced changes in thin films and solar cells fabricated in different laboratories. Unlike the many studies on undiluted a-Si:H films the kinetics reported here are for 1 sun illuminations carried out to the degraded steady state (DSS). The light induced changes at temperatures from 25 to 100°C were characterized with electron mobility lifetime products and subgap absorption in films and fill factors in solar cells. The significant changes in the degradation kinetics that occur in these materials in this t mperature range have further confirmed the importance of charged defects, not only in the annealed state, but also in the degraded steady states. Results are also presented on corresponding solar cell structures, which also indicate that defects other than neutral dangling bonds have to be taken into account if any meaningful evaluation is to be made of their solar cell properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Lee, Y., Jiao, L., Liu, H., Lu, Z., Collins, R.W. and Wronski, C.R., Conf. Record 25th IEEE PVSEC, 1165 (1996).Google Scholar
2. Koval, R. J., Koh, J., Lu, Z., Lee, Y., Jiao, L., Collins, R.W., and Wronski, C.R., Mater. Res. Soc. Symp. Proc. 557, 263 (1999).Google Scholar
3. Koh, J., Lee, Y., Fujiwara, H., Wronski, C.R., and Collins, R.W., Appl. Phys. Lett. 73, 1526 (1998).Google Scholar
4. Ferlauto, A. S., Koh, J., Rovira, P. I., Wronski, C.R., and Collins, R.W., Mater. Res. Soc. Symp. Proc. 557, 579 (1999).Google Scholar
5. Jiao, L., Semoushikiana, S., Lee, Y., and Wronski, C.R., Mater. Res. Soc. Symp. Proc. 467, 97 (1997).Google Scholar
6. Jiao, L., Ph.D. Thesis, The Pennsylvania State University (1998).Google Scholar
7. Stutzmann, M., Jackson, W.B., and Tsai, C.C., Phys. Rev. B 32, 23 (1985).Google Scholar
8. Lu, Z., Jiao, L., Koval, R. J., Collins, R.W., and Wronski, C.R., Mater. Res. Soc. Symp. Proc. 557, 785 (1999).Google Scholar
9. Wronski, C.R. and Daniel, R.E., Phys. Rev. B 23, 794 (1981).Google Scholar
10. Jiao, L., Liu, H., Semoushikiana, S., Lee, Y., and Wronski, C.R., Appl. Phys. Lett. 69, 3713 (1996).Google Scholar
11. Han, D. and Fritzche, H., J. Non-Cryst. Solid 59–60, 397 (1983).Google Scholar
12. Roedern, Bolko von., Appl. Phys. Lett. 62, 1368 (1993).Google Scholar
13. Yang, L., Chen, L., and Catalano, A., Appl. Phys. Lett. 59, 840 (1991).Google Scholar
14. Stradins, P. and Fritzsche, H., Phil. Mag. B 69, 121 (1994).Google Scholar
15. Vasanth, K., Wagner, S., Caputo, D., and Bennett, M., Conf. Record 24 th IEEE PVSEC, 488 (1994).Google Scholar
16. Wagner, S., Xu, X., Li, X.R., Shen, D.S., Isomura, M., Bennett, M., Delahoy, A.E., Li, X., Arch, J.K., Nicque, J.L., Fonash, S.J., Conf. Record 22 nd IEEE PVSEC, 1307 (1991).Google Scholar