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Kinetics of Growth and Recovery of Light-Induced Defects Under High-Intensity Illumination

Published online by Cambridge University Press:  21 February 2011

Masao Isomura  and
Sigurd Wagner
Masao Isomura
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ 08544
Sigurd Wagner
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ 08544
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Abstract

We report a study of the rates of generation and of annealing of the light-induced defects in hydrogenated amorphous silicon (a-Si:H). The rates of generation are found to be sensitive to temperature when the light intensity is high. This increased sensitivity to temperature at high rates suggests that a temperature-activated process such as hydrogen motion controls the rates of generation more when they are high. The rate of annealing at 130°C is strongly accelerated by illumination, and depends strongly on the light intensity. This may be explained by the diffusion of hydrogen, accelerated by excess carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 473
Copyright
Copyright © Materials Research Society 1992

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References

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