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The Kinetics of Damage Removal Metastable Carrier Concentration Relaxation and Secondary Defect Evolution During RTA
Published online by Cambridge University Press: 26 February 2011
Abstract
The kinetics of damage removal, metastable carrier concentration relaxation and secondary defect evolution in As+-implanted and rapidly annealed silicon was studied m detail. It was found that these processes are characterized by different activation energies. There is a critical temperature Tc for RTA. Only when the annealing temperature is higher than Tc, with suitable time duration can the RTA advantages be fully exloited.
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- Copyright © Materials Research Society 1988