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Kinetics of Chemical Vapor Deposition of Copper from (β-diketonate)CuL Precursors

  • Ajay Jain (a1), K. M. Chi (a2), T. T. Kodas (a1) and M. J. Hampden-Smith (a2)

Abstract

The reaction kinetics of (hfac)CuL were examined in a warm-wall differential reactor. The data are consistent with neutral ligand L dissociation as rate limiting for (hfac)CuVTMS. A strong dependence of film resistivity on (hfac)CuVTMS pressure was observed. Selectivity for tungsten (W) surfaces in the presence of PECVD SiO2 was not observed for (hfac)CuVTMS under the conditions employed.

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