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Kinetics of Chemical Vapor Deposition of Copper from (β-diketonate)CuL Precursors
Published online by Cambridge University Press: 25 February 2011
Abstract
The reaction kinetics of (hfac)CuL were examined in a warm-wall differential reactor. The data are consistent with neutral ligand L dissociation as rate limiting for (hfac)CuVTMS. A strong dependence of film resistivity on (hfac)CuVTMS pressure was observed. Selectivity for tungsten (W) surfaces in the presence of PECVD SiO2 was not observed for (hfac)CuVTMS under the conditions employed.
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- Copyright © Materials Research Society 1992
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