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Kinetic Roughening of Multilayer Ag/Ag(100) Films: Complex Temperature-Dependence in a Simple System

Published online by Cambridge University Press:  10 February 2011

C.R. Stoldt ,
K.J. Caspersen ,
M.C. Bartelt ,
C.J. Jenks ,
J.W. Evans  and
P.A. Thiel
C.R. Stoldt
Affiliation:
Departments of Chemistry, Mathematics, and Ames Laboratory, Iowa State University, Ames, IA 50011
K.J. Caspersen
Affiliation:
Departments of Chemistry, Mathematics, and Ames Laboratory, Iowa State University, Ames, IA 50011
M.C. Bartelt
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
C.J. Jenks
Affiliation:
Departments of Chemistry, Mathematics, and Ames Laboratory, Iowa State University, Ames, IA 50011
J.W. Evans
Affiliation:
Departments of Chemistry, Mathematics, and Ames Laboratory, Iowa State University, Ames, IA 50011
P.A. Thiel
Affiliation:
Departments of Chemistry, Mathematics, and Ames Laboratory, Iowa State University, Ames, IA 50011
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Abstract

Metal(100) homoepitaxial systems constitute perhaps the simplest class of systems in which to study thin film growth. Yet, our Variable-Temperature Scanning Tunneling Microscopy (VTSTM) analysis of Ag/Ag(100) homoepitaxy reveals that the variation of roughness with temperature is extraordinarily complex. As the deposition temperature is reduced from 300K to 50K, the roughness of 25 monolayer films first increases, then decreases, and then increases again. Furthermore, a transition from mound formation to self-affine (semi-fractal) growth occurs at around 135K. We postulate that the following the atomistic mechanisms underly this behavior: the existence of a small step-edge barrier inhibiting diffusive downward transport; “downward funneling” of atoms deposited at step edges and microprotrusions towards lower four-fold hollow adsorption sites; and statistically significant deviations from “complete” downward funneling at lower temperatures, where deposited atoms instead become trapped on the sides of (the more prevalent) small steep microprotrusions. To support these postulates, we employ kinetic Monte Carlo simulations to show that atomistic (lattice-gas) models for epitaxial growth, which incorporate these mechanisms, reproduce the experimental data quantitatively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 619: Symposium L – Recent Developments in Oxide & Metal Epitaxy – Theory… , 2000 , 15
Copyright
Copyright © Materials Research Society 2000

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References

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