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A Joining Technique Using Multilayer Lead-Indium-Gold Composite Deposited In High Vacuum

Published online by Cambridge University Press:  15 February 2011

Chin C. Lee ,
Chen-Yu Wang ,
Yi-Chia Chen  and
Goran Matijasevic
Chin C. Lee
Affiliation:
University of California, Department of Electrical and Computer Engineering, Irvine, CA 92717
Chen-Yu Wang
Affiliation:
University of California, Department of Electrical and Computer Engineering, Irvine, CA 92717
Yi-Chia Chen
Affiliation:
University of California, Department of Electrical and Computer Engineering, Irvine, CA 92717
Goran Matijasevic
Affiliation:
University of California, Department of Electrical and Computer Engineering, Irvine, CA 92717
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Abstract

A joining technique for electronic devices has been developed. This technique uses a leadindium- gold multilayer composite solder deposited directly on GaAs wafers in high vacuum to prevent indium oxidation. The gold layer on the composite further protects the indium layer from oxidation in atmosphere. The GaAs dies are bonded to a gold-coated alumina substrate at a process temperature of 250°C. Nearly perfect joints are achieved as verified by a scanning acoustic microscope (SAM). SEM and EDX results indicate that the alloy joint consists of AuIn2 grains embedded in an In-Pb solid solution phase, as predicted from the Au- In-Pb phase diagram. Compared to lead-tin solder, indium-lead solder has been shown by others to exhibit much better fatigue resistance and have much less of a scavenging effect. Thermal shock as well as shear tests confirm that a good die attach is obtained with the leadindium- gold composite.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 314: Symposium R – Joining and Adhesion of Advanced Inorganic Materials , 1993 , 235
Copyright
Copyright © Materials Research Society 1993

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