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Jet Vapor Deposition of Lead Zirconate Titanate (PZT) for Thin Film Pyroelectric Detectors

Published online by Cambridge University Press:  22 February 2011

John Golz
Affiliation:
Jet Process Corporation, New Haven, CT
Y. D. Di
Affiliation:
Jet Process Corporation, New Haven, CT
B. Halpern
Affiliation:
Jet Process Corporation, New Haven, CT
J. J. Schmitt
Affiliation:
Jet Process Corporation, New Haven, CT
Phil Cirino
Affiliation:
EDO Corporation/Barnes Engineering, Shelton, CT
A. Bartlett
Affiliation:
EDO Corporation/Barnes Engineering, Shelton, CT
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Abstract

Thin films of pyroelectric PZT deposited by Jet Vapor Deposition are considered here for application in IR detector arrays. PZT films of 0.5 μm thickness were deposited on platinum coated insulating substrates and then annealed to increase the perovskite grain size. Capacitor test structures were used to measure the dielectric constant, loss, AC resistivity, and pyroelectric coefficient. We compare the results with known values for bulk PZT and discuss their relevance to detector design and performance.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Halpern, B. L., J. Colloid & Interface Sci. 86, (1982).Google Scholar
2. Schmitt, J.J., U.S. Patent No. 4 788 082 (29 November 1988).Google Scholar
3. Halpern, B.L., Schmitt, J.J., Di, Y., Golz, J.W., Johnson, D.L., McAvoy, D.T., Wang, D., and Zhang, J.Z., Metal Finishing 90 (12), 3741 (1992)Google Scholar
4. Halpern, B.L., Schmitt, J.J., Golz, J.W., Johnson, D.L., McAvoy, D.T., Zhang, J.Z., and Di, Y.. in Jet Vapor Deposition of Thin Films, (35th Annual Tech. Conf. of Soc. of Vac. Coaters, Baltimore, MD, 1992).Google Scholar
5. Watton, R., Ainger, F., Porter, S., Pedder, D., Gooding, J. in Technologies and Performance for Linear and Two Dimensional Pvroelectric Arrays. (S.P.I.E 510, San Diego, CA, 1985) pp. 139148.Google Scholar
6. Hwang, C.L., Chen, B.A., Ma, T.P., Golz, J.W., Di, Y., Halpern, B.L., and Schmitt, J.J. in Ferroelectric Pb (Zr·Ti)Q3 Thin Films Prepared by Gas let Deposition, edited by Paz de Araujo, C. A. (3rd I.S.I.F Proc, Colorado Springs, CO, 1991) pp. 515523.Google Scholar
7. Hwang, C.L., Ma, T.P., Di, Y., Golz, J.W., Halpern, B.L., and Schmitt, J.J., in Jet Vapor Deposited PZT on Si and MIS Capacitors. (4th I.S.I.F. Proc, Monterey, CA, 1992).Google Scholar
8. Wang, D., Ma, T.P., Golz, J.W., Halpern, B.L., Schmitt, J.J., IEEE-Electron Device Letters 13 (9), 482484 (1992).Google Scholar
9. Byer, R.L. and Roundy, C.B., IEEE Trans. Sonics & Ultrasonics 19, 333 (1972).Google Scholar
10. Liu, S.T., Ferroelectrics 10, 83 (1976).Google Scholar
11. Burdickand, G.A., Arnold, R.T., J. Appl. Phys. 37, 3223 (1966).Google Scholar