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I-V CHARACTERISTICS OF a-Si:H p-i-n Diodes with Uniform and Non-Uniform Defect Distributions

Published online by Cambridge University Press:  17 March 2011

M.A. Kroon ,
R.A.C.M.M. van Swaaij  and
J.W. Metselaar
M.A. Kroon
Affiliation:
Delft University of Technology, Lab. of Electronic Components, Technology and Materials – DIMES, P.O. Box 5053, 2600 GB DELFT, the, Netherlands
R.A.C.M.M. van Swaaij
Affiliation:
Delft University of Technology, Lab. of Electronic Components, Technology and Materials – DIMES, P.O. Box 5053, 2600 GB DELFT, the, Netherlands
J.W. Metselaar
Affiliation:
Delft University of Technology, Lab. of Electronic Components, Technology and Materials – DIMES, P.O. Box 5053, 2600 GB DELFT, the, Netherlands
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Abstract

This paper compares a-Si:H p-i-n diodes having a spatially uniform distribution of defect states with diodes in which the defect distribution is non-uniform, i.e. equilibrated according to the Defect-Pool model. Diodes with a uniform defect distribution exhibit a clear dependence of the current-voltage characteristics on the width of the intrinsic region, whereas in equilibrated diodes, this dependence is absent. This difference is explained by comparing the space-charge distribution and the recombination profile of the intrinsic region in both types of diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A10.3
Copyright
Copyright © Materials Research Society 2000

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References

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