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I-V Characteristics and Interface Properties of Al-Si(P) Contacts by the Krf Excimer Laser Induced Recrystallization

Published online by Cambridge University Press:  28 February 2011

K. Sohn ,
H. Lee  and
D. A. Hensley
K. Sohn
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Tech nology Newark, NJ 07102
H. Lee
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Tech nology Newark, NJ 07102
D. A. Hensley
Affiliation:
Center for Ceramic Research, Rutgers University Piscataway, NJ 08855
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Abstract

Al was deposited on the both sides of p-type Si by the sputtering, and the pulsed KrF excimer laser was irradiated on the one side and both sides of Al dot contacts. Due to the thin-high doping recrystallized layer, the transitions from the Schottky diodes to the ohmic contacts via backward diodes were observed in I-V measurement. Good N-shape negative resistances and notches were observed in the diodes, and ohmic contacts. Possible interpretations of the orgin of these phenomena are discussed. And, the simple model of the effective barrier height reduction under the thermionic field emission was developed using WKB approximation, and tunneling theory. By the depth Auger analysis, Al, and Si profiles near Al-Si interface after the laser irradiation were observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 733
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Nishimura, T., Sugahara, K. and Akaska, Y., FED SOI/3D Workshop, March 19–21, Shuzenji, Japan (1985)Google Scholar
2 Card, Howard C., IEEE. ED. 23, No. 6, 538, June (1976)Google Scholar
3 Stathis, J.H. and Kastner, M.A., Phys. Rev. B 29, 7079 (1984)Google Scholar
4 Devine, R.A., Riori, C. and Robertson, J., Mat. Res. Soc. Symp. Proc. 61, 177 (1986)Google Scholar
5 Harrison, W.A., Phys. Rev. 123, 85–89 (1961)Google Scholar
6 Gray, P.V., Phys. Rev. 140, A, 179–186 (1965)Google Scholar
7 Bonch-Bruevich, V.L., Soviet Phys. Solid State, 6, No. 7, 1615 (1965)Google Scholar
8 Ridley, B.K. and Pratt, R.G., J. Phys. Chem. Solids, 26, 21 (1965)Google Scholar
9 Gunn, J.B., IBM J. Res. Develop. 10, 300 (1966)Google Scholar
10 Al-Moufti, M.N., Jaskolaski, S.V. and Ishii, T.K., Proc. IEEE. 56, 2, 236 (1968)Google Scholar
11 Sze, S.M., Semiconductor Devices Physics and Technology (John Wiley & Sons Publishers, New York, 1985), P.374 Google Scholar