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Issues in Emissivity of Silicon
Published online by Cambridge University Press: 10 February 2011
Abstract
The first qualitative results of the effects of backside surface roughness on the radiative properties of silicon as a function of temperature in the wavelength range of 1–20μm are presented in this study. These measurements have been made utilizing a spectral emissometer operating at near- and mid-IR spectral range. Surface roughness of the silicon wafer has been observed to lead to increased emissivities.
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- Copyright © Materials Research Society 1998
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