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Island Coalescence Induced Substructure Within GaP Epitaxial Layers Grown on (001), (111), (110) and (113) Si

  • V. Narayanan (a1), S. Mahajan (a1), K. J. Bachmann (a2), V. Woods (a3) and N. Dietz (a3)...

Abstract

GaP islands grown on selected surfaces of Si and their coalescence behavior have been investigated by transmission electron microscopy. These layers were grown by chemical beam epitaxy. A number of significant observations emerge from this study. First, planar defect formation has been shown to be related to stacking errors on the smaller P-terminated {111} facets of GaP islands. Amongst the four orientations, (111) epilayers have a higher density of stacking faults and first order twins because of more P-terminated {111} facets per island. Second, multiple twinning on exposed {111} facets can produce tilt boundaries and irregular growths when islands coalesce. Third, inversion domain boundaries lying on {110} planes have been shown to form during GaP island coalescence across monatomic steps on (001) Si. Image simulations have been performed to show that these boundaries can be seen in high resolution lattice images and the observed contrast is attributed to the presence of wrong Ga-Ga and P-P bonds at the inversion boundary.

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1 Narayanan, V., Mahajan, S., Sukidi, N., Bachmann, K. J., Woods, V. and Dietz, N., Phil. Mag. A 80 (3), 555 (2000).
2 Narayanan, V., Sukidi, N., Bachmann, K. J. and Mahajan, S., Thin Solid Films 357, 53 (1999).
3 Sukidi, N., Bachmann, K. J., Narayanan, V. and Mahajan, S., J. Electrochem. Soc. 146 (3), 1147 (1999).
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6 Narayanan, V., Ph.D.Thesis, Carnegie Mellon University, 1999.

Island Coalescence Induced Substructure Within GaP Epitaxial Layers Grown on (001), (111), (110) and (113) Si

  • V. Narayanan (a1), S. Mahajan (a1), K. J. Bachmann (a2), V. Woods (a3) and N. Dietz (a3)...

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