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Is zinc oxide a potential material for future high-power and high-frequency electron device applications?

  • Poppy Siddiqua (a1), Walid A. Hadi (a1), Michael S. Shur (a2) and Stephen K. O’Leary (a1)

Abstract

At the present moment, zinc oxide is primarily being used as an electronic material for low-field thin-film transistor and transparent conducting oxide device applications. In this paper, we present some recent results on the steady-state electron transport within zinc oxide suggesting that this material may also be considered as an alternative material to gallium nitride for high-power and high-frequency electron device applications. The expected device performance that may be obtained from zinc oxide-based devices is then projected and contrasted with that expected from gallium nitride-based devices. It is shown that zinc oxide-based devices have a slight advantage when compared with the case of gallium nitride.

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