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Ion-Surface Interactions During Epitaxy

  • S. A. Barnett (a1), C.-H. Choi (a1) and R. Kaspi (a1)

Abstract

Recent work on low-energy ion-assisted deposition of epitaxial films is reviewed. Much of the interest in this area has centered on the use of very low ion energies (∼ 25 eV) and high fluxes (> 1 ion per deposited atom) obtained using novel ion-assisted deposition techniques. These methods have been applied in ultra-high vacuum, allowing the preparation of high-purity semiconductor materials. The following ion-surface interaction effects during epitaxy are discussed: improvements in crystalline perfection during low temperature epitaxy, ion damage effects, improved homogeneity and properties in III-V alloys grown within miscibility gaps, and changes in nucleation mechanism from Stranski-Krastanov to layer-by-layer.

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Ion-Surface Interactions During Epitaxy

  • S. A. Barnett (a1), C.-H. Choi (a1) and R. Kaspi (a1)

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