Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-21T12:26:32.789Z Has data issue: false hasContentIssue false

Ion-Irradiation-Induced Densification of Zirconia Sol -Gel Thin Films

Published online by Cambridge University Press:  22 February 2011

Timothy E. Levine
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
Emmanuel P. Giannelis
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
Padma Kodali
Affiliation:
Los Alamos National Laboratory, Materials Sci. and Tech. Div., Los Alamos, NM 87545
Joseph Tesmer
Affiliation:
Los Alamos National Laboratory, Materials Sci. and Tech. Div., Los Alamos, NM 87545
Michael Nastasi
Affiliation:
Los Alamos National Laboratory, Materials Sci. and Tech. Div., Los Alamos, NM 87545
James W. Mayer
Affiliation:
Arizona State Univeristy, Dept. of Chem., Bio, and Materials. Eng., Tempe, AZ 85278
Get access

Abstract

We have investigated the densification behavior of sol-gel zirconia films resulting from ion irradiation. Three sets of films were implanted with neon, krypton, or xenon. The ion energies were chosen to yield approximately constant energy loss through the film and the doses were chosen to yield similar nuclear energy deposition. Ion irradiation of the sol-gel films resulted in carbon and hydrogen loss as indicated by Rutherford backscattering spectrometry and forward recoil energy spectroscopy. Although the densification was hypothesized to result from target atom displacement, the observed densification exhibits a stronger dependence on electronic energy deposition.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Brinker, C.J. and Soberer, G.W., Sol-Gel Science. (Academic Press, New York, 1990), Ch. 13.Google Scholar
2 Shacham-Diamand, Y., Moriya, N., and Kalish, R., Mater. Res. Soc. Symp. Proc., 180, 703 (1990).Google Scholar
3 Levine, T.E., Keddie, J.L., Revesz, P., Mayer, J.W., and Giannelis, E.P., J. Am. Ceram. Soc., 76, 1369 (1993)Google Scholar
4 Levine, T.E., Revesz, P., Giannelis, E.P., and Mayer, J.W., presented at the International Workshop on Plasma-Based Ion Implantation, Madison, WI August 4-6th, 1993., to be published in the Journal of Vacuum Science and Technology B.Google Scholar
5 Biersack, J.P., Haggmark, L.G., Nucl. Instrum. Methods, 174, 257 (1980); Nucl. Instrum. Methods, B7, 461 (1985).Google Scholar
6 Pascual, R., Sayer, M., Yi, G. and Baker, C., J. Can. Ceram. Soc. Q., 60, 43 (1991).Google Scholar
7 Keddie, J.L. and Giannelis, E.P., J. Am. Ceram. Soc., 73, 3106 (1990).Google Scholar
8 Venkatesan, T., Nucl. Instrum. Methods, B7, 461 (1985).Google Scholar
9 Calcagno, L., Compagnini, G., and Foti, G., Nucl. Instrum. Methods, B65, 413 (1992).Google Scholar