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Ion-Enhanced Chemical Reaction of XeF2 with Silicon by Modulated Molecular Beam Mass Spectrometry

Published online by Cambridge University Press:  21 February 2011

M. Balooch ,
D. R. Olander  and
W. J. Siekhaus
M. Balooch
Affiliation:
Nuclear Engineering Department of University of California, Berkeley and Molecular Research Division of Lawrence Berkeley Laboratory
D. R. Olander
Affiliation:
Nuclear Engineering Department of University of California, Berkeley and Molecular Research Division of Lawrence Berkeley Laboratory
W. J. Siekhaus
Affiliation:
Chemistry and Materials Science Division of Lawrence Livermore National Laboratory
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Abstract

The reaction of XeF2 with the Si(100) surface was studied by modulated (10–1000 Hz) molecular beam-mass spectrometry in the temperature range 300–1300K and equivalent XeF2 pressure of 5×10−6 to 10−4 Torr. Simultaneous bombardment of the reacting surface by Ar+ was used to determine the extent of ion-enhancement of the reaction.

In the absence of the ion beam, the main reaction product was SiF4, which was formed with a reaction probability of ˜5×10−2 at room temperature. In the presence of the ion beam three products, SiF4, SiF2 and F2 (or F), were detected with formation probabilities of ˜1×10−1, 6×10−2 and 7×10−2 respectively. Increasing surface temperature reduced the ion-enhanced reactivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 171
Copyright
Copyright © Materials Research Society 1985

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