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Ion Implantation to Inhibit Corrosion of Copper

Published online by Cambridge University Press:  25 February 2011

P. J. Dmg ,
W. A. Lanford ,
S. Hymes  and
S. P. Murarka
P. J. Dmg
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 12222
W. A. Lanford
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 12222
S. Hymes
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY12180
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Abstract

Ion implantation of boron and aluminium is used to passivate copper surfaces. Such a process modifies the copper only near its surface without affecting copper's desirable bulk properties. The present experiments show that implant doses as low as 1015 ions/cm2 of either boron or aluminium can reduce the oxidization rate by one order of magnitude or more compared to non-implanted samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 757
Copyright
Copyright © Materials Research Society 1992

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References

References:

[1] Chu, W. -K., Mayer, J. W. and Nicolet, M. -A., Backscattering Spectrometry, Academic Press, New York, 1978.Google Scholar
[2] Crowder, B. L. and Tan, S. I., IBM Tech. Disclosure Bull. 14, 198(1971)Google Scholar
[3] Svendsen, L. G., Corros. Sci. 20, 63(1980)CrossRefGoogle Scholar
[4] Svendsen, L. G., Eskildsen, S. S. and Borgesen, P., Thin Solid Films, 110, 237(1983)CrossRefGoogle Scholar
[5] Henriksen, O., Laursen, T., Johnson, E., Johansen, A., Sarholt-Kristensen, L. and Whitton, J. L., Nucl. Instr. and Meth. B15, 356(1986)Google Scholar
[6] Svendsen, L. G. and Borgesen, P., Nucl. Instr. and Meth. 191, 141(1981)CrossRefGoogle Scholar
[7] Zhou, P., Procter, R. P. M., Grant, W. A. and Ashworth, V., Nucl. Instr. and Meth. 209/210, 841(1983)Google Scholar
[8] Naguib, H. M., Kriegler, R. J., Davies, J. A. and Mitchell, J. B., J. Vac. Sci. Technol. 13, 396(1976)CrossRefGoogle Scholar
[9] Ratcliffe, R. J. and Collins, R. A., Phys. Stat. Sol.(a) 108, 537(1988)Google Scholar
[10] Boron Deoxidized Copper 1170, Publication TP-58, 2nd Edition, Anaconda American Brass Company(1967)Google Scholar
[11] Bardeen, J., Brattain, W. H. and Shockley, W., J. Chem. Phys. 14, 714(1946)Google Scholar
[12] Ebisuzaki, Y. and Sanborn, W. B., J. Chem. Educa. 62, 341(1985)Google Scholar
[13] Roy, S. K., Bose, S. K. and Sircar, S. C., Oxid. Met. 35, 1(1991)CrossRefGoogle Scholar
[14] Uhrmacher, M., Bartos, A. and Boise, W., Mat. Sci. Eng. Al 16, 129(1989)CrossRefGoogle Scholar
[15] Ziegler, J. F., Biersack, J. P. and Littmark, U., The Stopping and Range of Ions in Solids, Pergamon Press, New York, 1985.Google Scholar